Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

High-polishing-degree CMP polishing solution and preparation method thereof

A technology of polishing liquid and cyclodextrin, applied in polishing compositions, chemical instruments and methods, polishing compositions containing abrasives, etc., can solve problems such as poor polishing degree of polishing liquid, and achieve improved polishing degree and improved polishing degree. , the effect of improving compatibility

Active Publication Date: 2021-08-03
SHENZHEN SAPIENCE TECH CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above-mentioned related technologies, the inventor found that when the reagent was used: the degree of polishing of the above-mentioned polishing liquid was relatively poor, so it was urgent to study the CMP polishing liquid of high polishing degree

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-polishing-degree CMP polishing solution and preparation method thereof
  • High-polishing-degree CMP polishing solution and preparation method thereof
  • High-polishing-degree CMP polishing solution and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] A high polishing degree CMP polishing liquid, the preparation method is: after mixing 30kg of abrasives and 64.2kg of water, 1.5kg of water-soluble cyclodextrin and 0.1kg of polyethylene glycol are mixed evenly, and then 4kg of pH regulator and 0.2 kg surfactant mixed evenly to prepare a high polishing degree CMP polishing fluid;

[0037] The abrasive material used is silica sol, the pH regulator used is sodium hydroxide, the surfactant used is anionic polyacrylamide, the polyethylene glycol used is PEG-2000, and the water-soluble cyclodextrin used is hydroxypropyl beta cyclodextrin.

Embodiment 2-7

[0039] Embodiments 2-7 are all based on Embodiment 1, and differ from Embodiment 1 only in that the amount of each raw material is different, see Table 2 for details.

[0040] Table 2. Each raw material source of embodiment 1-7

[0041]

Embodiment 8

[0043] Example 8 is based on Example 1, and the only difference from Example 1 is that the water-soluble cyclodextrin used is a mixture of methyl β-cyclodextrin and water-soluble polymeric cyclodextrin, and methyl β-cyclodextrin and water-soluble The weight ratio of non-polymeric cyclodextrin is 1:1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Resistivityaaaaaaaaaa
Login to View More

Abstract

The invention relates to the field of chemical mechanical polishing, and particularly discloses a high-polishing-degree CMP polishing solution and a preparation method thereof. The CMP solution with high polishing degree of every 100 parts by weight comprises 10-45 parts by weight of abrasive, 2-7 parts by weight of pH regulator, 0.03-0.3 part by weight of surfactant, 0.5-2.5 parts by weight of water-soluble cyclodextrin, 0.03-0.15 part by weight of polyethylene glycol and the balance of water. The preparation method comprises the following steps: uniformly mixing the abrasive and water, sequentially adding water-soluble cyclodextrin and polyethylene glycol, uniformly conducting mixing, adding the pH regulator and the surfactant, and uniformly conducting mixing to obtain the high-polishing-degree CMP polishing solution. The high-polishing-degree CMP polishing solution has the advantage of being high in polishing degree.

Description

technical field [0001] The application relates to the field of chemical mechanical polishing, more specifically, it relates to a high polishing degree CMP polishing fluid and a preparation method thereof. Background technique [0002] Since silica sol and gel were first applied to the polishing process of silicon wafers, CMP polishing fluid has become one of the most important and indispensable auxiliary materials in semiconductor manufacturing. The polishing process of silicon wafer is an intermediate process of device preparation. The polishing effect greatly affects the quality of semiconductor devices. It is used to eliminate the surface damage of silicon wafer in the previous process and control the defects and impurities of silicon wafer. [0003] Due to the rapid development of foreign semiconductor technology, most of the CMP polishing fluids used in my country are imported from abroad. At present, in order to promote the development of my country's semiconductor te...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09G1/02C09G1/14C09G1/16C09G1/18
CPCC09G1/02C09G1/14C09G1/16C09G1/18
Inventor 王继宝周翠苹
Owner SHENZHEN SAPIENCE TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products