Silver ion sensor based on titanium carbide MXene field effect transistor and application thereof

Abstract

The invention relates to a silver ion sensor based on a titanium carbide MXene field effect transistor and application of the silver ion sensor. The sensor comprises a silicon grid electrode (1), a silicon dioxide layer (2), an interdigital gold electrode region and a titanium carbide MXene layer (5), the silicon dioxide layer (2) is located above the silicon grid (1), the interdigital electrode area is located above the silicon dioxide layer (2), the titanium carbide MXene layer (5) is also located above the silicon dioxide layer (2), and the sensor is applied to sensing detection of silver ions (6) in an aqueous solution. Compared with the prior art, the sensor has the advantages of simple preparation, convenient operation, high sensitivity, fast response, good selectivity and the like.

Description

technical field [0001] The invention relates to the field of chemical sensors, in particular to a silver ion sensor based on a titanium carbide MXene field effect transistor and an application thereof. Background technique [0002] Silver is a kind of heavy metal widely used in a large amount. The silver ions generated after oxidation will cause serious harm to the health of environmental organisms through bioaccumulation and biomagnification. Determining the concentration of silver ions in the environment is crucial to assessing and controlling its environmental risks, and is an important part of environmental monitoring. [0003] However, traditional detection methods, such as plasma spectroscopy, plasma mass spectrometry, liquid chromatography-mass spectrometry, etc., are expensive, time-consuming, complex to operate, and rely on large-scale instruments, which cannot be applied to the in-situ detection of silver ions in the environment. Therefore, it is of great signific...

AI Technical Summary

Problems solved by technology

However, the zero-bandgap characteristic of graphene severely restricts the detection performance of FET sensors.

Moreover, most of the existing FET sensors need to use special detection groups or probes modified on the sensing channel material to ensure the specificity of the sensor to the analyte, which also greatly limits the sensor preparation and operation process. portability

Images