Stack type micro-display driving chip architecture and preparation method thereof

Abstract

The invention discloses a stack type micro-display driving chip architecture which comprises an upper pixel circuit layer and a lower driving circuit layer which are mutually independent, the edge of the pixel circuit layer is provided with a TSV circuit, the middle of the pixel circuit layer is provided with a pixel circuit, and the periphery of the upper surface of the driving circuit layer is provided with protruding contacts used for being electrically connected with the TSV circuit. A pixel circuit and a peripheral driving circuit are prepared separately by using a stack type framework, and then the two circuits are bonded together by using a 3D packaging technology of wafer to wafer or die to wafer, so a driving IC of 3D stacking of the pixel circuit and the peripheral driving circuit is prepared. The purposes of reducing the die pixel area, improving the yield and reducing the cost are achieved; meanwhile, the problem of poor compatibility of a traditional driving IC is solved, and the requirements of large driving current of a pixel circuit and high speed of a driving circuit can be met; and power consumption and heating are reduced.

Description

technical field [0001] The invention relates to the technical field of micro-display driving. Background technique [0002] Silicon-based MOSFET (metal-oxide-semiconductor field-effect transistor) driver ICs have been widely used in the field of microdisplays, including silicon-based organic light-emitting diodes (silicon-based OLEDs), liquid crystals on silicon (LCOS), Micro LEDs, digital light processing ( DLP), etc., have achieved ultra-high resolution with the help of high carrier mobility (~1350cm2 / Vs) of single crystal silicon. The traditional micro-display driver IC includes two parts: pixel circuit and peripheral circuit. The pixel circuit is a repeated circuit array, which is used to drive the optical structure and display images; the peripheral circuit includes row driver circuit, column driver circuit, storage circuit (SRAM), logic operation Circuit (logic), analog-to-digital / digital-to-analog conversion module (ADC / DAC), control IO circuit, power management modu...

AI Technical Summary

Problems solved by technology

However, due to differences in manufacturing processes, it is difficult to integrate processes with a large gap on the same wafer. For example, it is possible to integrate 0.5um and 0.18um processes on the same wafer, but it is difficult to integrate 0.5um and 45nm processes. This process Incompatibility greatly limits the performance improvement of micro-display driver ICs, so it is meaningful to reduce costs and develop high-performance micro-display driver ICs

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