Mg-Bi-based lamellar block crystal material and growth method thereof

A technology of crystal materials and growth methods, applied in the growth of polycrystalline materials, crystal growth, single crystal growth, etc., can solve the problems of inability to obtain high-quality bulk crystal materials, difficulty in growth amplification, high growth costs, etc., and achieve repeated use. High efficiency, uniform distribution of constituent elements, improved crystal quality and growth efficiency

Active Publication Date: 2021-08-10
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above preparation method is limited by the cost of equipment and crucibles, and it is impossible to obtain low-defect high-quality bulk crystal materials, and it is difficult to grow and scale up; in addition, the literature (J.Xin et al./Materials Today Physics 7(2018) 61-68; Adv.Mater.2020, 32, 1908218; Energy Environ.Sci., 2020, 13, 1

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  • Mg-Bi-based lamellar block crystal material and growth method thereof
  • Mg-Bi-based lamellar block crystal material and growth method thereof
  • Mg-Bi-based lamellar block crystal material and growth method thereof

Examples

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Comparison scheme
Effect test

Embodiment 1

[0051] Example 1: Mg 3.2 Bi 1.49 Sb 0.5 Te 0.01 Preparation of Layered Bulk Polycrystalline Materials

[0052] (1) In the glove box of Ar gas atmosphere, press Mg 3.2 Bi 1.49 Sb 0.5 Te 0.01 The stoichiometric ratio of each atom, the single substance raw material of each element is weighed in the Ta crucible; another graphite crucible is placed upside down on the Ta crucible, and the graphite crucible and the Ta crucible are placed opposite to each other, and the above two crucibles are protected under the Ar atmosphere. Raise the temperature to 1000°C to fully react and melt the raw materials, and then quench to obtain a polycrystalline ingot tightly adhered to the Ta crucible.

[0053] (2) Exchange the positions of the Ta crucible and the graphite crucible in step (1), so that the Ta crucible is located above the graphite crucible, put it into the descending furnace, and raise the temperature to 1000 ° C under the protection of Ar atmosphere, that is, the temperature o...

Embodiment 2

[0056] Example 2: Mg 3.2 Bi 1.49 Sb 0.5 Te 0.01 Preparation of Layered Bulk Single Crystal Materials

[0057] (1) In the glove box of Ar gas atmosphere, press Mg 3.2 Bi 1.49 Sb 0.5 Te 0.01 The stoichiometric ratio of each atom, the single substance raw material of each element is weighed in the Ta crucible; another graphite crucible is placed upside down above the Ta crucible, and the graphite crucible and the Ta crucible are placed opposite to each other, and the above two crucibles are placed under the protection of Ar gas atmosphere , the temperature is raised to 1000°C, so that the raw materials are fully reacted and melted, and then quenched to obtain a polycrystalline ingot tightly adhered to the Ta crucible.

[0058](2) Exchange the positions of the Ta crucible and the graphite crucible in step (1), so that the Ta crucible is located above the graphite crucible, put it into the descending furnace, and raise the temperature to 1000 ° C under the protection of Ar a...

Embodiment 3

[0061] Example 3: Mg 3.2 Bi 0.99 SbT 0.01 Preparation of Layered Bulk Polycrystalline Materials

[0062] (1) In the glove box of Ar gas atmosphere, press Mg 3.2 Bi 0.99 SbT 0.01 The stoichiometric ratio of each atom, the single substance raw material of each element is weighed in the Ta crucible; another graphite crucible is placed upside down above the Ta crucible, and the graphite crucible and the Ta crucible are placed opposite to each other, and the above two crucibles are placed under the protection of Ar gas atmosphere , the temperature is raised to 1050°C, so that the raw materials are fully reacted and melted, and then quenched to obtain a polycrystalline ingot tightly adhered to the Ta crucible.

[0063] (2) Exchange the positions of the Ta crucible and the graphite crucible in step (1), so that the Ta crucible is located above the graphite crucible, put it into the descending furnace, and raise the temperature to 1050 ° C under the protection of Ar atmosphere, t...

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Abstract

The invention provides an Mg-Bi-based lamellar block crystal material and a growth method thereof. The crystal structure of the crystal material is Mg3Bi2 configuration and presents a shale-shaped morphology. The growth method comprises the following steps: under the protection of vacuum or inert atmosphere, heating a vacant non-metal crucible for growing crystals to a preset temperature; and injecting a molten Mg-Bi-based crystal growth raw material solution into the non-metal crucible which is heated to the preset temperature, and carrying out crystal growth through a Bridgman-Stockbarger method or a seed crystal oriented growth method to obtain the Mg-Bi-based lamellar block crystal material. The growth method is simple in process and low in cost, crystals can be prepared in an amplified mode, and the Mg-Bi matrix block crystal material obtained through the growth method has a large-size, high-quality and regular layered structure, shows excellent thermoelectric performance near the room temperature and can be directly applied to preparation of thermoelectric devices.

Description

technical field [0001] The invention relates to a Mg-Bi-based layered body bulk crystal material and a growth method thereof, belonging to the technical field of crystal growth and new material preparation. Background technique [0002] Thermoelectric materials can directly realize the conversion of thermal energy and electrical energy, and have important applications in power generation and cooling of portable devices. Moreover, thermoelectric devices are considered to be an effective way to improve energy and environmental problems due to their small size, simple structure, no moving parts, no pollution, and long life. According to thermodynamic theory, the conversion efficiency of thermoelectric devices is determined by the Carnot efficiency and the thermoelectric performance (thermoelectric figure of merit) of the material itself. To further improve the thermoelectric figure of merit of thermoelectric materials and improve the conversion efficiency is the key to the rese...

Claims

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Application Information

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IPC IPC(8): C30B29/52C30B11/00C30B11/02C30B28/06H02N11/00
CPCC30B29/52C30B11/002C30B11/02C30B28/06H02N11/002
Inventor 夏盛清王琦琦刘小村
Owner SHANDONG UNIV
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