First-order electro-optical effect silicon modulator and preparation process thereof

Abstract

The invention discloses a first-order electro-optical effect silicon modulator and a preparation process thereof, and belongs to the field of electro-optical effect silicon modulators. The preparation process comprises the following steps that: a silicon waveguide region is etched, so that an amorphous silicon growth window can be formed, wherein the amorphous silicon growth window is formed by etching the upper surface of the silicon waveguide region; the bottom of the amorphous silicon growth window is also provided with an auxiliary window, and the auxiliary window is formed by etching the bottom of the amorphous silicon growth window; amorphous silicon is deposited in the amorphous silicon growth window, and the surface of the deposited amorphous silicon is covered with a silicon dioxide layer; and the amorphous silicon growth window isirradiated with light with the wavelength of 488 nm to convert at least one part of the amorphous silicon in the amorphous silicon growth window into monocrystalline silicon. According to the prepared first-order electro-optical effect silicon modulator, the function limitation of a center inversion symmetric structure on the silicon-based electro-optical modulator is broken through by introducing asymmetric stress into the silicon structure, the modulation efficiency of the silicon-based modulator is greatly improved, the size of the device is effectively reduced, the bandwidth is improved, and the insertion loss is reduced.

Description

technical field [0001] The invention relates to the field of electro-optic effect silicon modulators, in particular to a first-order electro-optic effect silicon modulator and a preparation process thereof. Background technique [0002] As a traditional material in the field of microelectronics, silicon (Si) material has incomparable advantages over other materials in terms of processing technology and production cost. Silicon-based optoelectronic devices have the advantages of easy integration and low process cost, which have attracted extensive attention of researchers in recent years. [0003] However, although the silicon-based optoelectronic technology for optical communication and optical interconnection has been well developed, due to the limitation of the characteristics of silicon materials, silicon-based optoelectronic technology still has some deficiencies in some aspects. [0004] As one of the important representative components in silicon-based optoelectronic ...

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However, the plasmonic dispersion effect is still very weak, resulting in low modulation ef

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