Coating equipment

Abstract

The invention relates to coating equipment. The equipment is characterized by comprising sample fixing frames, and a sample feeding chamber, a sample transfer chamber, a first coating chamber and a second coating chamber which are in a vacuum state, and the sample feeding chamber, the first coating chamber and the second coating chamber are in communication with or separated from the sample transfer chamber through sample transfer slit valves; a plurality of bars are arranged in the sample fixing frames, and cleavage surfaces on the two sides of each bar are exposed; a conveying device is arranged in the sample feeding chamber and can be used for sequentially conveying a plurality of sample fixing frames into the sample feeding chamber or conveying the sample fixing frames out of the equipment; a sample transfer mechanism is arranged in the sample transfer chamber, and the sample transfer mechanism can sequentially transfer the sample fixing frames on the conveying device into the first coating chamber and the second coating chamber and then send the sample fixing frames back to the conveying device; the first coating chamber is used for cleaning the cleavage surfaces on two sides of each bar and coating with passive films; and the second coating chamber is used for coating the passive film on one side of each bar with an anti-reflection film and coating the passive film on the other side of each bar with a high-reflection film. According to the equipment, the damage to the catastrophic optical mirror surface is avoided.

Description

technical field [0001] The invention relates to the field of chip coating, in particular to a coating device. Background technique [0002] Semiconductor lasers, also known as laser diodes, are core devices in the fields of optical communication, optical sensing, and optical pumping. Its working principle is to rely on electrons to transition between energy bands to emit light through a certain excitation method, and use the cleavage surface 101a of the semiconductor crystal to form two parallel reflection mirrors to form a resonant cavity 101e, so that the light oscillates and feeds back to generate light radiation amplification. Laser output. [0003] Please refer to Figure 1 to Figure 3 , when producing the semiconductor laser chip 1011, step one, the semiconductor wafer 1 is cleaved into several bar-shaped bars 101; The cleavage surfaces 101a of the cleavage surfaces 101a are respectively coated, wherein the cleavage surface 101a on one side is coated with an anti-ref...

AI Technical Summary

Problems solved by technology

[0004] In the process of cleaving and stacking the bars 101 in the second step, the cost of operating under complete vacuum conditions or high-purity gas conditions is much higher than that of operating in air, but operating in the air will inevitably cause resonance of the bars 101 Oxidation and impurity contamination on the cavity surface of the cavity 101e, if this problem exists, the chip 1011 obtained in step 3 will cause the temperature of the cavity surface to rise rapidly under the action of high optical power density, and the increase in temperature will further deteriorate the interface state, and The light absorption is enhanced, and finally the cavity surface is burned, and the laser fails. This kind of catastrophic optical mirror damage has always been an important factor limiting the reliability of semiconductor lasers, especially for high-power semiconductor lasers, the impact of catastrophic optical mirror damage is more prominent

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