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A kind of alumina passivation film of perc battery and its deposition method and application

A deposition method and aluminum oxide technology, which can be used in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as potential safety hazards and poor uniformity, and achieve the effects of improving efficiency, improving film thickness uniformity, and reducing darkening

Active Publication Date: 2022-07-12
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Two-in-one, that is, PECVD method to deposit AlO x and silicon nitride, AlO deposited in this way x Compared with the ALD method, the compactness has a certain disadvantage. As a compensation for the passivation effect, PECVD deposits AlO x The film thickness is relatively thick about 8-10nm, and the uniformity is poor. Calculated on the basis of 40 points in the whole boat, the film thickness uniformity of a single tube is 15-20%.
The technical scheme provided by this document requires the reaction of the oxidizing agent and trimethylaluminum, which has a certain degree of potential safety hazard

Method used

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  • A kind of alumina passivation film of perc battery and its deposition method and application

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Experimental program
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Effect test

Embodiment 1

[0035] This embodiment provides a method for depositing an aluminum oxide passivation film on the backside of a silicon wafer during the process of preparing a crystalline silicon solar cell, and the deposition method is as follows:

[0036] (1) Vacuuming, heating the furnace tube to 350 ° C, then pre-injecting nitrous oxide and trimethyl aluminum synchronously, the constant pressure is 1300mt, and the sum of the time of pre-injection and constant pressure is 20s, wherein, the nitrous oxide The pre-injection flow is 5500sccm, and the pre-injection flow of trimethylaluminum is 66g / h;

[0037] (2) Turn on the microwave, continue to feed nitrous oxide and trimethylaluminum, and carry out deposition to obtain a silicon wafer coated with an aluminum oxide passivation film.

Embodiment 2

[0039] This embodiment provides a method for depositing an aluminum oxide passivation film on the backside of a silicon wafer during the process of preparing a crystalline silicon solar cell, and the deposition method is as follows:

[0040] (1) Vacuuming, heating the furnace tube to 280 ° C, then pre-injecting nitrous oxide and trimethyl aluminum synchronously, the constant pressure is 800mt, the sum of the time of pre-injection and constant pressure is 50s, wherein, the nitrous oxide The pre-injection flow is 4000sccm, and the pre-injection flow of trimethylaluminum is 30g / h;

[0041](2) Turn on the microwave, continue to feed nitrous oxide and trimethylaluminum, and carry out deposition to obtain a silicon wafer coated with an aluminum oxide passivation film.

Embodiment 3

[0043] This embodiment provides a method for depositing an aluminum oxide passivation film on the backside of a silicon wafer during the process of preparing a crystalline silicon solar cell, and the deposition method is as follows:

[0044] (1) Turn off the radio frequency power supply, evacuate, heat the furnace tube to 340 ° C, and then pre-inject nitrous oxide and trimethyl aluminum simultaneously, the constant pressure is 1500mt, and the total time of pre-injection and constant pressure is 120s, among which , the pre-injection flow of nitrous oxide is 7000sccm, and the pre-injection flow of trimethylaluminum is 100g / h;

[0045] (2) Turn on the microwave, continue to feed nitrous oxide and trimethylaluminum, and carry out deposition to obtain a silicon wafer coated with an aluminum oxide passivation film.

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Abstract

The invention provides an aluminum oxide passivation film of a PERC battery, a deposition method and application thereof. The deposition method includes: (1) performing pretreatment before deposition of the aluminum oxide passivation film, the pretreatment includes: feeding nitrous oxide and trimethylaluminum after heating up, and keeping the pressure constant; (2) under microwave conditions, Continue to feed nitrous oxide and trimethyl aluminum to deposit the aluminum oxide passivation film to obtain the silicon wafer coated with the aluminum oxide passivation film. In the present invention, before depositing the aluminum oxide passivation film, nitrous oxide (nitrogen monoxide) and trimethylaluminum (TMA) are simultaneously introduced for constant pressure stabilization, which can ensure that there are enough reaction gases at the tail of the furnace, which can The uniformity of the deposited aluminum oxide passivation film is improved, and the degree of darkening on both sides of the EL is reduced, thereby improving the efficiency of the cell.

Description

technical field [0001] The invention belongs to the technical field of crystalline silicon solar cells, and relates to an aluminum oxide passivation film of a PERC cell and a deposition method and application thereof. Background technique [0002] With the large-scale mass production of PERC cells, the back passivation tube type two-in-one route has gradually become the mainstream of the industry. Large-size battery companies mass-produced from 2020 to March 2021 will all choose the two-in-one route. 2-in-1 deposition of AlO by PECVD x and silicon nitride, AlO deposited in this way x Density has certain disadvantages compared to ALD method. As compensation for passivation effect, PECVD deposits AlO x The film thickness is relatively thick about 8-10nm, and the uniformity is poor. Calculated at 40 points in the whole boat, the uniformity of the film thickness of a single tube is 15-20%. The thick part of the alumina is plated to the front, and the contact with the grid lin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/511C23C16/40H01L31/0216
CPCC23C16/511C23C16/403H01L31/02167Y02P70/50
Inventor 张磊何悦王在发任勇孙龙华
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD