Analog circuit comprising high-resistance resistor and GGNMOS ESD and manufacturing method thereof

Abstract

The invention discloses an analog circuit comprising a high-resistance resistor and a GGNMOS ESD and a manufacturing method thereof. The method comprises steps of forming a first STI, a second STI, a first high-voltage P well and a second high-voltage P well on the semiconductor substrate, performing polycrystalline silicon deposition on the surface of the semiconductor substrate to form a polycrystalline silicon region, opening a window in the polycrystalline silicon region on the semiconductor substrate, and performing high-resistance injection and high-energy injection to form high-resistance polycrystalline silicon, N+ polycrystalline silicon, a first ESD injection well and a second ESD injection well. Two photomasks are combined into one photomask through high-resistance injection and high-energy injection, the problem that the process for manufacturing an analog circuit including a high-resistance resistor and a GGNMOS ESD is complex is solved, and the manufacturing cost is saved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an analog circuit including a high-resistance resistor and a GGNMOS ESD and a manufacturing method thereof. Background technique [0002] High-resistance resistors and GGNMOS ESD (gate-grounded NMOS electrostatic discharge) are widely used in analog circuits in chip design. A cross-sectional schematic diagram of a high-resistance resistor device in an analog circuit in the prior art is shown as figure 1 As shown, the high-resistance resistor includes a first STI1 (Shallow Trench Isolation, shallow trench isolation region), a first high-voltage P-well 3 , a first P-type body region 2 and a high-resistance polysilicon 4 . The cross-sectional schematic diagram of the GGNMOSESD device in the analog circuit in the prior art is as figure 2 As shown, the GGNMOS ESD includes several second STIs 5 , a second high-voltage P well 6 , a second P-type body region 7 , two N-type b...

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Problems solved by technology

[0004] The technical problem to be solved in the present invention is in order to overcome the manufacturing process steps of the analog circuit comprising high-impedance resistor and GGNMOS ESD complex in the prior art, the defect that manufacturing cost is higher, propose a kind of analog circuit including high-impedance resistor and GGNMOS ESD and its production method

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