Atomic-scale ion cleaning and activating low-temperature bonding device and method
A low-temperature bonding, atomic-level technology, applied in cleaning methods and appliances, chemical instruments and methods, electrical components, etc., can solve problems such as the inability to achieve wafer atomic-level bonding connections, hindering performance parameters, and surface dangling bond distortions
Pending Publication Date: 2021-09-10
XI AN JIAOTONG UNIV
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Problems solved by technology
[0002] In the surface activation bonding experiment, the surface of the wafer will generate dangling bonds after ion activation, but due to the existence of reconstruction and adsorption, the surface will generally undergo surface reconstruction and adsorption, resulting in the saturation or distortion of the surface dangling bonds. Atomic-level bonding connections not possible for wafer bonding
Traditional bonding devices often use intermediate layer bonding or high-temperature thermocompression bonding. In bonding with special requirements for heat transfer, electrical conductivity or other, the intermediate layer will cause additional thermal resistance, additional resistance or other obstacles to performance parameters. produce
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[0040] Specifically, an atomic-level ion cleaning and activation low-temperature bonding method,
[0041] Step S1: Wash and dry the wafer in sequence with acetone, absolute ethanol, and plasma water;
[0042] Step S2: Put 2 wafers into the sample carrier of the clean and activated vacuum chamber;
[0043] Step S3: Evacuate the vacuum chamber to ultra-high vacuum 10 -6 Below Pa, pass in the argon gas required for cleaning and activation, control the gas flow rate, set the RF source parameters to 50W, and the chamber pressure to 1.2Pa to generate plasma and perform initial cleaning and activation on the wafer surface;
[0044] Step S4: Turn off the argon gas required for activation, pass in the silane gas required for atomic layer deposition, control the gas flow, set the parameters of the radio frequency source to 50W, and the chamber pressure to 1.2Pa, clean the surface adsorption layer, activate the surface dangling bonds, and deposit a Layer 1-3 atomic layer interface laye...
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The invention discloses an atomic-scale ion cleaning and activating low-temperature bonding device and method, a radio frequency electrode and an air source are arranged in a bonding vacuum cavity, a movable bearing table is adopted, a bonding bearing table is arranged on the movable bearing table, and two symmetrically-arranged sample bearing tables are arranged on the bonding bearing table; the sample bearing table is connected with the bonding bearing table through the movable rotary table, the movable rotary table can slide on the bonding bearing table, the sample bearing table is rotationally connected with the movable rotary table, the upper end of the sample bearing table is used for fixing a pre-bonded wafer, and the bonding vacuum cavity can move between the bonding vacuum cavity and the annealing vacuum cavity, a relatively fixed space in which low-temperature treatment and annealing treatment are carried out is formed, low-temperature treatment and annealing treatment can be carried out in a low-temperature environment, an annealing heating device in an annealing vacuum cavity carries out gas deposition on an atomic layer to avoid lattice mismatch of a difficult-to-bond interface, and finally, a wafer is subjected to thermal annealing through a thermal annealing treatment device, so that a high-quality bonding interface and high-quality bonding strength are obtained.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing and vacuum equipment, in particular to an atomic-level ion cleaning and activation low-temperature bonding device and method. Background technique [0002] In the surface activation bonding experiment, the surface of the wafer will generate dangling bonds after ion activation, but due to the existence of reconstruction and adsorption, the surface will generally undergo surface reconstruction and adsorption, resulting in the saturation or distortion of the surface dangling bonds. Atomic level bonding connections for wafer bonding cannot be achieved. Traditional bonding devices often use intermediate layer bonding or high-temperature thermocompression bonding. In bonding with special requirements for heat transfer, electrical conductivity or other, the intermediate layer will cause additional thermal resistance, additional resistance or other obstacles to performance parameters. produce. ...
Claims
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IPC IPC(8): H01L21/50H01L21/02H01L21/324B08B7/00
CPCH01L24/75H01L24/83B08B7/0035H01L2224/7501H01L2224/7515H01L2224/83013H01L2224/83022H01L2224/83948
Inventor 张景文时明月刘静楠王燕张恒清侯洵
Owner XI AN JIAOTONG UNIV