Semiconductor structure and forming method thereof
A semiconductor and conductive structure technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as large contact resistance
Pending Publication Date: 2021-09-14
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0004] However, the semiconductor structure formed by the prior art still has the problem of high contact resistance between the metal plug and the semiconductor connector.
Method used
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[0039] As mentioned in the background, the semiconductor structure formed in the prior art still has the problem of high contact resistance between the metal plug and the semiconductor connector. The following will describe in detail with reference to the accompanying drawings.
[0040] Figure 1 to Figure 3 It is a structural schematic diagram of each step in the formation process of a semiconductor structure.
[0041] Please refer to figure 1 1. A substrate 100 is provided, the substrate 100 has a first conductive structure 101 inside, and the surface of the substrate 100 exposes the first conductive structure 101 .
[0042] Please refer to figure 2 , forming a first dielectric layer 102 on the substrate 100 ; forming a first opening 103 in the first dielectric layer 102 , the first opening 103 exposing the top surface of the first conductive structure 101 .
[0043] Please refer to image 3 , forming a first barrier layer 104 in the first opening 103 ; forming a plug ...
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Abstract
The invention discloses a semiconductor structure and a forming method thereof. The method comprises the following steps: providing a substrate which is internally provided with a first conductive structure; forming a first dielectric layer on the substrate; forming a first opening in the first dielectric layer and extending into the first conductive structure, wherein the bottom surface of the first opening is lower than the top surface of the first conductive structure; and forming a plug structure in the first opening. In the semiconductor structure provided by the technical scheme of the invention, through a first opening which is located in a first dielectric layer and extends into a first conductive structure, the bottom surface of the first opening is lower than the top surface of the first conductive structure; and the plug structure is positioned in the first opening. The contact area between the first conductive structure and the plug structure is increased by utilizing the first opening extending into the first conductive structure, so that the contact resistance between the first conductive structure and the plug structure is reduced, and the electrical performance of the finally formed semiconductor structure is further improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the continuous advancement of semiconductor technology, the feature size of semiconductor devices is gradually reduced. The reduction of critical dimensions means that more transistors can be arranged on the chip, and at the same time, higher requirements are placed on the semiconductor process. [0003] Due to the good electrical conductivity of metal, in semiconductor technology, the electrical connection between semiconductor connectors (for example, gate and source-drain doped regions) and external circuits is usually realized through metal plugs. However, due to the large difference in the Fermi level between the metal and the semiconductor, the potential barrier between the metal plug and the semiconductor connector is relatively high, resulting in a large contact...
Claims
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IPC IPC(8): H01L23/522H01L23/528H01L21/768
CPCH01L23/5226H01L23/5283H01L21/76877
Inventor 金吉松
Owner SEMICON MFG INT (SHANGHAI) CORP