Thermal barrier/infrared low-emissivity integrated coating based on fluorescent sublayer and preparation method thereof

A low-emissivity, infrared technology, applied in fluorescence/phosphorescence, chemical instruments and methods, coatings, etc., can solve the problem of early detection of damage to stealth materials, accurate positioning, coating performance cannot be accurately monitored, and coating performance is difficult to achieve Evaluation and other issues to achieve the effect of improving the overall service life, good thermal stability, and low thermal conductivity

Pending Publication Date: 2021-09-17
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, there is a lack of systematic maintenance and guarantee technology for the high-temperature infrared stealth coating system, and the coating performance cannot be accurately monitored. To realize the performance evaluation of coatings in the whole life cycle, and to design a high-temperature infrared low-emissivity coating with rapid in-situ detection function has become the main technical problem that professional technicians pay attention to.

Method used

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  • Thermal barrier/infrared low-emissivity integrated coating based on fluorescent sublayer and preparation method thereof
  • Thermal barrier/infrared low-emissivity integrated coating based on fluorescent sublayer and preparation method thereof
  • Thermal barrier/infrared low-emissivity integrated coating based on fluorescent sublayer and preparation method thereof

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Embodiment 1

[0050] A thermal barrier / infrared low emissivity integrated coating based on a fluorescent sublayer, such as figure 1 As shown, it is a multi-layer structure, starting from the base, including CoNiCrAlY metal bonding layer, 8YSZ ceramic inner layer, LaMgAl 11 o l9 :Eu 3+ Fluorescent sublayer and infrared low emissivity layer. Among them, LaMgAl 11 o l9 :Eu 3+ Eu in the fluorescent sublayer 3+ The doping amount is 1.0mol%; the infrared low emissivity layer is made of AgPd conductive phase and Bi 2 o 3 -TiO 2 -Al 2 o 3 -SiO 2 -Li 2 O-CaO-MgO-B 2 o 3 The AgPd conductive phase accounts for 85% of the total mass of the infrared low emissivity layer. The thickness of CoNiCrAlY metal bonding layer is 0.05mm, the thickness of 8YSZ ceramic inner layer is 0.2mm, LaMgAl 11 o l9 :Eu 3+ The thickness of the fluorescent sublayer is 0.2mm, the thickness of the infrared low emissivity layer is 0.02mm, and the total thickness of the coating is 0.47mm.

[0051] The preparatio...

Embodiment 2

[0070] A thermal barrier / infrared low emissivity integrated coating based on a fluorescent sublayer, which is a multi-layer structure, starting from the substrate, including NiCrAlY metal bonding layer, 8YSZ ceramic inner layer, LaMgAl 11 o l9 :Tb 3+ Fluorescent sublayer and infrared low emissivity layer. Among them, LaMgAl 11 o l9 :Tb 3+ Tb in fluorescent sublayer 3+ The doping amount is 1.5mol%; the infrared low emissivity layer is made of AgPd conductive phase and Bi 2 o 3 -TiO 2 -Al 2 o 3 -SiO 2 -Li 2 O-CaO-MgO-B 2 o 3 The AgPd conductive phase accounts for 83% of the total mass of the infrared low emissivity layer. The thickness of NiCrAlY metal bonding layer is 0.05mm, the thickness of 8YSZ ceramic inner layer is 0.15mm, LaMgAl 11 o l9 :Tb 3+ The thickness of the fluorescent sublayer is 0.2mm, the thickness of the infrared low emissivity layer is 0.02mm, and the total thickness of the coating is 0.42mm.

[0071] The preparation method of the thermal bar...

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Abstract

The invention relates to the technical field of high-temperature infrared stealth coatings, and particularly discloses a thermal barrier / infrared low-emissivity integrated coating based on a fluorescent sublayer, the thermal barrier / infrared low-emissivity integrated coating is of a multi-layer structure, and the thermal barrier / infrared low-emissivity integrated coating sequentially comprises a metal bonding layer, a thermal barrier ceramic inner layer, a rare earth fluorescent sublayer and an infrared low-emissivity layer from inside to outside. According to the thermal barrier / infrared low-emissivity integrated coating disclosed by the invention, aiming at the urgent application requirements of thermal shock resistance life prolonging and external field in-situ detection of a high-temperature infrared stealth coating, the rare earth fluorescent sublayer is added into the ceramic layer by combining a rare earth fluorescent sublayer technology, a thermal barrier ceramic layer technology and a high-temperature infrared low-emissivity coating technology; and damage indication of the infrared low-emissivity layer is achieved, and meanwhile by means of the low infrared emissivity characteristic of the high-temperature low-emissivity coating and the excellent heat insulation characteristic of the ceramic layer, the thermal barrier / infrared low-emissivity integrated coating has the heat insulation performance and the high-temperature infrared stealth performance.

Description

technical field [0001] The invention belongs to the technical field of high-temperature infrared stealth coatings, in particular to a fluorescent sublayer-based thermal barrier / infrared low emissivity integrated coating and a preparation method thereof. Background technique [0002] Due to the significant infrared radiation characteristic signal in the high temperature part of the aircraft, it faces the threat of infrared guidance. Relatively speaking, reducing the surface infrared emissivity of components has become the main technical way to realize infrared stealth at high temperature. Among them, high temperature infrared stealth coating has the advantages of little influence on the shape of the aircraft, simple process, low cost and high reliability, and is widely used in High temperature parts of aviation equipment. However, due to the phenomenon of parts collision, friction, and local overheating of the engine during the service of the aircraft during its entire life ...

Claims

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Application Information

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IPC IPC(8): C23C4/134C23C4/073C23C4/11C23C4/06C09K11/80G01N21/64G01N25/72
CPCC23C4/134C23C4/073C23C4/11C23C4/06C09K11/7792C09K11/7774G01N25/72G01N21/6428G01N2021/6439Y02T50/60
Inventor 黄文质胡涛涛张金东
Owner NAT UNIV OF DEFENSE TECH
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