Thermal barrier/infrared low-emissivity integrated coating based on fluorescent sublayer and preparation method thereof
A low-emissivity, infrared technology, applied in fluorescence/phosphorescence, chemical instruments and methods, coatings, etc., can solve the problem of early detection of damage to stealth materials, accurate positioning, coating performance cannot be accurately monitored, and coating performance is difficult to achieve Evaluation and other issues to achieve the effect of improving the overall service life, good thermal stability, and low thermal conductivity
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Embodiment 1
[0050] A thermal barrier / infrared low emissivity integrated coating based on a fluorescent sublayer, such as figure 1 As shown, it is a multi-layer structure, starting from the base, including CoNiCrAlY metal bonding layer, 8YSZ ceramic inner layer, LaMgAl 11 o l9 :Eu 3+ Fluorescent sublayer and infrared low emissivity layer. Among them, LaMgAl 11 o l9 :Eu 3+ Eu in the fluorescent sublayer 3+ The doping amount is 1.0mol%; the infrared low emissivity layer is made of AgPd conductive phase and Bi 2 o 3 -TiO 2 -Al 2 o 3 -SiO 2 -Li 2 O-CaO-MgO-B 2 o 3 The AgPd conductive phase accounts for 85% of the total mass of the infrared low emissivity layer. The thickness of CoNiCrAlY metal bonding layer is 0.05mm, the thickness of 8YSZ ceramic inner layer is 0.2mm, LaMgAl 11 o l9 :Eu 3+ The thickness of the fluorescent sublayer is 0.2mm, the thickness of the infrared low emissivity layer is 0.02mm, and the total thickness of the coating is 0.47mm.
[0051] The preparatio...
Embodiment 2
[0070] A thermal barrier / infrared low emissivity integrated coating based on a fluorescent sublayer, which is a multi-layer structure, starting from the substrate, including NiCrAlY metal bonding layer, 8YSZ ceramic inner layer, LaMgAl 11 o l9 :Tb 3+ Fluorescent sublayer and infrared low emissivity layer. Among them, LaMgAl 11 o l9 :Tb 3+ Tb in fluorescent sublayer 3+ The doping amount is 1.5mol%; the infrared low emissivity layer is made of AgPd conductive phase and Bi 2 o 3 -TiO 2 -Al 2 o 3 -SiO 2 -Li 2 O-CaO-MgO-B 2 o 3 The AgPd conductive phase accounts for 83% of the total mass of the infrared low emissivity layer. The thickness of NiCrAlY metal bonding layer is 0.05mm, the thickness of 8YSZ ceramic inner layer is 0.15mm, LaMgAl 11 o l9 :Tb 3+ The thickness of the fluorescent sublayer is 0.2mm, the thickness of the infrared low emissivity layer is 0.02mm, and the total thickness of the coating is 0.42mm.
[0071] The preparation method of the thermal bar...
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