Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Czochralski method-based crystal growth interface shape detection method and device

A technology of crystal growth and detection method, applied in the direction of crystal growth, single crystal growth, self-melt pulling method, etc.

Active Publication Date: 2021-09-21
SUN YAT SEN UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Based on the above discussion, it can be concluded that the technology of real-time detection of crystal growth interface shape is of great help to crystal development and production; however, there is still no technical report on real-time detection of interface shape based on the pulling method crystal growth

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Czochralski method-based crystal growth interface shape detection method and device
  • Czochralski method-based crystal growth interface shape detection method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Using the detection method and device of the present invention, the shape of the growth interface during the growth of lithium niobate crystals can be detected in real time, combined with figure 1 and figure 2 Be explained.

[0049] via figure 1 The four leading wires numbered a, b, c and d shown in the figure lead out the electrical signals of the seed crystal temperature and the interface electromotive force at the end of the constantly rotating and rising high-temperature seed crystal, and display them in the thermometer and voltmeter respectively in real time , record, summarize, plot into figure 2 (with the seed temperature T as the horizontal axis and the interface electromotive force U as the vertical axis) T-U curve. The whole process of crystal growth by the pulling method includes six stages in sequence: heating, crystal dropping, shouldering, equal diameter, pulling off, and cooling. The detection method of the present invention is mainly used in the two...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

Description

technical field [0001] The invention relates to the field of crystal growth, in particular to a method and device for detecting the shape of a crystal growth interface based on a pulling method. Background technique [0002] The Czochralski method (pulling method) is the main method for preparing single crystals in the field of crystal production. Worldwide, the equipment of this method accounts for more than 90%. The crystal category covers most semiconductor crystals, laser crystals and scintillation crystals such as monocrystalline silicon, sapphire, lithium niobate, and YAG. It is almost large-scale single crystal growth. , synonymous with production methods. The pulling method also includes many derivative methods, including the Kyroplasty method, the guided mold method, the heat exchange method, etc., and its basic structure and physical process are all derived from the pulling method. [0003] In the current pulling method growth equipment, the main (or even the onl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B15/22
CPCC30B15/22
Inventor 朱允中王彪王文佳
Owner SUN YAT SEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com