Czochralski method-based crystal growth interface shape detection method and device

A technology of crystal growth and detection method, applied in the direction of crystal growth, single crystal growth, self-melt pulling method, etc.

Active Publication Date: 2021-09-21
SUN YAT SEN UNIV
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Problems solved by technology

[0005] Based on the above discussion, it can be concluded that the technology of real-time detection of crystal growth interface shape is of great help to crys

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  • Czochralski method-based crystal growth interface shape detection method and device
  • Czochralski method-based crystal growth interface shape detection method and device

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[0047] Example 1

[0048] Using the detection method and apparatus of the present invention, real-time detection of growth interface in lithium niobate crystal growth process, combined figure 1 with figure 2 Be explained.

[0049] via figure 1 The four-numeral A, B, C, and D is taken out of the wire, and the electrical signal of the seed temperature and the interface electromotive force is taken out in the constant rotation and rising high temperature seed crystal end, and displayed in real time in the temperature meter and voltage meter. , Record, summary, drawing figure 2 (T-U curve of the horizontal axis, the interface electromotive force u is the longitudinal axis. The full range of talent crystal growth includes: warming, lower crystal, shoulder, equilate, pullery, cooling, a total of six stages, the detection method of the present invention is primarily applied to the two key stages of the auxiliary shoulder and the equation. . The specific operation is as follows:

[0050] ...

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Abstract

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

Description

technical field [0001] The invention relates to the field of crystal growth, in particular to a method and device for detecting the shape of a crystal growth interface based on a pulling method. Background technique [0002] The Czochralski method (pulling method) is the main method for preparing single crystals in the field of crystal production. Worldwide, the equipment of this method accounts for more than 90%. The crystal category covers most semiconductor crystals, laser crystals and scintillation crystals such as monocrystalline silicon, sapphire, lithium niobate, and YAG. It is almost large-scale single crystal growth. , synonymous with production methods. The pulling method also includes many derivative methods, including the Kyroplasty method, the guided mold method, the heat exchange method, etc., and its basic structure and physical process are all derived from the pulling method. [0003] In the current pulling method growth equipment, the main (or even the onl...

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Application Information

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IPC IPC(8): C30B15/22
CPCC30B15/22
Inventor 朱允中王彪王文佳
Owner SUN YAT SEN UNIV
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