Atomic layer deposition on 3D NAND structures

Abstract

Methods and apparatuses are described that provide tungsten deposition with low roughness. In some embodiments, the methods involve co-flowing nitrogen with hydrogen during an atomic layer deposition process of depositing tungsten that uses hydrogen as a reducing agent. In some embodiments, the methods involve depositing a cap layer, such as tungsten oxide or amorphous tungsten layer, on a sidewall surface of a 3D NAND structure. The disclosed embodiments have a wide variety of applications including depositing tungsten into 3D NAND structures.

Description

[0001] incorporated by reference [0002] The PCT application form is filed as part of this application at the same time as this specification. Each application from which this application claims the benefit or priority, as identified in the concurrently filed PCT application form, is hereby incorporated by reference in its entirety for all purposes. Background technique [0003] The deposition of tungsten-containing materials is an integral part of many semiconductor manufacturing processes. These materials can be used for horizontal interconnects, vias between adjacent metal layers, and contacts between metal layers and devices. However, as devices shrink and more complex patterning schemes are used in industry, the deposition of tungsten thin films becomes a challenge. Deposition in complex high aspect ratio structures such as 3D NAND structures is particularly challenging. [0004] The background description provided herein is for the purpose of generally presenting the...

AI Technical Summary

Problems solved by technology

However, as devices shrink and more complex patterning schemes are used in industry, the deposition of tungsten thin films becomes a challenge

Deposition in complex high aspect ratio structures such as 3D NAND structures is particularly challenging

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