Method for preparing heteroepitaxial monocrystal diamond by using Pt series metal as Ir buffer layer
A technology of single crystal diamond and heterogeneous epitaxy, which is applied in metal material coating process, single crystal growth, single crystal growth, etc., can solve the problems of reducing Ir film stress, fracture, and Ir film is easy to fall off, so as to reduce the preparation thickness , Improve growth quality, reduce stress effect
Active Publication Date: 2021-09-24
XI AN JIAOTONG UNIV
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[0003] The purpose of this invention is to provide a kind of method that utilizes Pt series metal as Ir buffer layer to prepare heterogeneous epitaxial single crystal diamond, utilizes Pd as Ir and substrate The buffer layer of the buffer layer can effectively reduce the stress of the Ir film and solve the problem that the Ir film is easy to fall off and break
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[0032] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0033] The present invention utilizes Pt series metal as Ir buffer layer to prepare the method for heterogeneous epitaxial single crystal diamond, and this method comprises the following steps:
[0034] Step 1, preparing a Pt-based metal (001) oriented thin film 11 on the heteroepitaxial substrate 10; the Pt-based metal is Pt or Pd. The thickness of the Pt-based metal (001) oriented film 11 is 10 nanometers to 1 micrometer. A Pd (001) oriented thin film 11 is prepared on the heteroepitaxial substrate 10 by magnetron sputtering. The substrate is Si, SrTiO3, MgO or Al 2 o 3 One of.
[0035] Step 2. Epitaxially grow an Ir(001) oriented film 12 on the Pt-based metal (001) oriented film 11 described in step 1. The thickness of the Ir(001) oriented film 12 is 10 nanometers to 1 micron. The above-mentioned Ir(001) orientation film 12 enhances b...
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Abstract
The invention discloses a method for preparing a heteroepitaxial monocrystal diamond by using Pt series metal as an Ir buffer layer. The method comprises the following steps: step 1, preparing a Pt series metal (001) oriented film on a heteroepitaxial substrate; step 2, epitaxially growing an Ir (001) oriented film on the Pt series metal (001) oriented film in the step 1; step 3, preparing a diamond core in the (001) direction on the Ir (001) oriented film in the second step; step 4, subjecting the diamond core in the (001) direction in the step 3 to epitaxial growth in MP-CVD, and obtaining the continuous diamond film in the (001) direction. In the preparation method, Pd is used as a buffer layer between Ir and the substrate, so that the stress of the Ir thin film can be effectively reduced, and the problem that the Ir thin film is easy to fall off and break is solved.
Description
technical field [0001] The invention belongs to the technical field of epitaxial growth of single crystal diamond, and in particular relates to a method for preparing heterogeneous epitaxial single crystal diamond by using Pt metal as an Ir buffer layer. Background technique [0002] Diamond is a wide-bandgap semiconductor with an extreme thermal conductivity of 2200W / m / K and electron mobility (4500 for electrons, 3800cm2 / Vs for holes) of great significance for new quantum and high-power electronic devices. Due to the special mode of diamond nucleation on the Ir film, the epitaxially grown single crystal diamond on Ir has the characteristics of high nucleation density and good crystal orientation consistency, so iridium has become the most important coating lining for the preparation of single crystal diamond wafers Bottom material. Because Ir has a very high elastic modulus (538.3GPa), high rigidity, and strong brittleness, the stress is also large when strain occurs, espe...
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IPC IPC(8): C30B25/18C30B29/04C23C14/35C23C14/18C23C14/16
CPCC30B25/183C30B25/186C30B29/04C23C14/35C23C14/165C23C14/185
Inventor 魏强林芳张晓凡王若铮陈根强王宏兴
Owner XI AN JIAOTONG UNIV