CMOS infrared detector with solid column

An infrared detector and solid column technology, applied in the field of infrared detection, can solve the problems of low infrared detector performance, low pixel scale, and low yield rate, and achieve the effects of reducing process difficulty, small chip area, and high yield rate

Active Publication Date: 2021-09-28
BEIJING NORTH GAOYE TECH CO LTD
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Problems solved by technology

[0010] In order to solve the above technical problems or at least partially solve the above technical problems, the present disclosure provides a CMOS infrared detector with a solid column, which solves the traditional MEMS process infrared The low performance of the detector, low pixel size, low yield and poor consistency have improved the structural stability of the infrared detector, which is conducive to the miniaturization of the infrared detector and is conducive to reducing the difficulty of preparing the infrared detector.

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Embodiment Construction

[0055] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that, in the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other.

[0056] In the following description, many specific details are set forth in order to fully understand the present disclosure, but the present disclosure can also be implemented in other ways than described here; obviously, the embodiments in the description are only some of the embodiments of the present disclosure, and Not all examples.

[0057] figure 1 A schematic diagram of a three-dimensional structure of an infrared detector pixel provided by an embodiment of the present disclosure, figure 2 A schematic cross-sectional structure diagram of an infrared detector pixel provided by an embodiment of the present disclosure. com...

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Abstract

The invention relates to a CMOS infrared detector with a solid column, a CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using a CMOS process, the CMOS manufacturing process comprises a metal interconnection process, a through hole process, an IMD process and an RDL process, a columnar structure in the infrared detector is a solid columnar structure, the columnar structure comprises a solid structure, the side wall of the solid structure is in contact with the sacrificial layer, and the material forming the solid structure comprises at least one of tungsten, copper or aluminum. Through the technical scheme disclosed by the invention, the problems of low performance, low pixel scale, low yield, poor consistency and the like of a traditional MEMS process infrared detector are solved, the structural stability of the infrared detector is improved, the miniaturization of the infrared detector is favorably realized, and the preparation difficulty of the infrared detector is favorably reduced.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to a CMOS infrared detector with a solid column. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensing structure is prepared by MEMS (M...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/24
CPCG01J5/24Y02P70/50
Inventor 翟光杰潘辉武佩翟光强
Owner BEIJING NORTH GAOYE TECH CO LTD
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