CMOS infrared detector with solid column

Abstract

The invention relates to a CMOS infrared detector with a solid column, a CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using a CMOS process, the CMOS manufacturing process comprises a metal interconnection process, a through hole process, an IMD process and an RDL process, a columnar structure in the infrared detector is a solid columnar structure, the columnar structure comprises a solid structure, the side wall of the solid structure is in contact with the sacrificial layer, and the material forming the solid structure comprises at least one of tungsten, copper or aluminum. Through the technical scheme disclosed by the invention, the problems of low performance, low pixel scale, low yield, poor consistency and the like of a traditional MEMS process infrared detector are solved, the structural stability of the infrared detector is improved, the miniaturization of the infrared detector is favorably realized, and the preparation difficulty of the infrared detector is favorably reduced.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to a CMOS infrared detector with a solid column. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensing structure is prepared by MEMS (M...

AI Technical Summary

Problems solved by technology

[0010] In order to solve the above technical problems or at least partially solve the above technical problems, the present disclosure provides a CMOS infrared detector with a solid column, which solves the traditional MEMS process infrared The low performance of the detector, low pixel size, low yield and poor consistency have improved the structural stability of the infrared detector, which is conducive to the miniaturization of the infrared detector and is conducive to reducing the difficulty of preparing the infrared detector.

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