Electrochemical copper plating method based on fully-additive process
A full-additive, copper-plating technology, applied in liquid chemical plating, electrolytic components, electrolytic processes, etc., can solve the problems of long time interval between electroplating and copper sinking, obvious cost increase, poor copper surface adhesion, etc. The effect of saving process transfer process and time, increasing etching processing capacity, and improving production capacity
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Embodiment 1
[0041] A method for electrochemical copper plating based on a full addition method, characterized in that it comprises the following steps: drilling-removing smear-dry film-electrochemical copper plating-etching;
[0042] Described electrochemical copper plating process specifically comprises:
[0043] S1. Using a catalytic reduction system, adjust the electrochemical copper plating reaction system, and form a uniform and dense copper layer on the substrate or hole surface by depositing copper;
[0044] S2. In the existing plating solution system, copper is used as a soluble anode and titanium is used as a cathode, and the copper layer is thickened by electroplating.
[0045] Further, in the step S1, the electro-chemical copper plating reaction system is an acidic system, and the pH value of the acidic system is 1.5.
[0046] Further, in the step S1, the thickness of the copper layer is 3um.
[0047] Further, in the step S1, the rate of copper deposition is 0.3um / min, and th...
Embodiment 2
[0059] This embodiment provides the same electrochemical copper plating method based on the full addition method as in Example 1. The difference is that, further, in the step S1, the electrochemical copper plating reaction system is an acidic system, and the The pH of an acidic system is 1.0.
[0060] Further, in the step S1, the thickness of the copper layer is 2um.
[0061]Further, in the step S1, the rate of copper deposition is 0.2um / min, and the time is controlled at 4min.
[0062] Further, in the step S2, a direct current of 10 ASF is used for electroplating, and the time is controlled at 25 minutes.
[0063] Further, in the step S2, the copper layer is thickened by 4um.
[0064] Further, in the step S2, the total thickness of the copper layer is 20um.
Embodiment 3
[0066] This embodiment provides the same electrochemical copper plating method based on the full addition method as in Example 1. The difference is that, further, in the step S1, the electrochemical copper plating reaction system is an acidic system, and the The pH of an acidic system is 2.0.
[0067] Further, in the step S1, the thickness of the copper layer is 4um.
[0068] Further, in the step S1, the rate of copper deposition is 0.5um / min, and the time is controlled at 10min.
[0069] Further, in the step S2, a direct current of 20 ASF is used for electroplating, and the time is controlled at 45 minutes.
[0070] Further, in the step S2, the copper layer is thickened by 8um.
[0071] Further, in the step S2, the total thickness of the copper layer is 30um.
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