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Electrochemical copper plating method based on fully-additive process

A full-additive, copper-plating technology, applied in liquid chemical plating, electrolytic components, electrolytic processes, etc., can solve the problems of long time interval between electroplating and copper sinking, obvious cost increase, poor copper surface adhesion, etc. The effect of saving process transfer process and time, increasing etching processing capacity, and improving production capacity

Pending Publication Date: 2021-10-01
GUANGDONG CHAMPION ASIA ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] 1. After electroless copper deposition, the surface of the board is easy to oxidize and blacken, and the thickness of the copper deposition layer itself is relatively low. There is a large reliability risk in the process of copper deposition to electroplating transportation. At present, various technical means can meet the requirements of daily production. Demand, but the cost increase is more obvious;
[0005] 2. The interval between electroplating and copper sinking is long, and a layer of electroplated copper layer needs to be thickened by electroplating on the surface of the copper sinking layer, resulting in a long process and complicated procedures;
[0006] 3. The copper surface adhesion of the general full addition method is poor, and the heat resistance and reliability standards are quite different from the existing technical standards.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] A method for electrochemical copper plating based on a full addition method, characterized in that it comprises the following steps: drilling-removing smear-dry film-electrochemical copper plating-etching;

[0042] Described electrochemical copper plating process specifically comprises:

[0043] S1. Using a catalytic reduction system, adjust the electrochemical copper plating reaction system, and form a uniform and dense copper layer on the substrate or hole surface by depositing copper;

[0044] S2. In the existing plating solution system, copper is used as a soluble anode and titanium is used as a cathode, and the copper layer is thickened by electroplating.

[0045] Further, in the step S1, the electro-chemical copper plating reaction system is an acidic system, and the pH value of the acidic system is 1.5.

[0046] Further, in the step S1, the thickness of the copper layer is 3um.

[0047] Further, in the step S1, the rate of copper deposition is 0.3um / min, and th...

Embodiment 2

[0059] This embodiment provides the same electrochemical copper plating method based on the full addition method as in Example 1. The difference is that, further, in the step S1, the electrochemical copper plating reaction system is an acidic system, and the The pH of an acidic system is 1.0.

[0060] Further, in the step S1, the thickness of the copper layer is 2um.

[0061]Further, in the step S1, the rate of copper deposition is 0.2um / min, and the time is controlled at 4min.

[0062] Further, in the step S2, a direct current of 10 ASF is used for electroplating, and the time is controlled at 25 minutes.

[0063] Further, in the step S2, the copper layer is thickened by 4um.

[0064] Further, in the step S2, the total thickness of the copper layer is 20um.

Embodiment 3

[0066] This embodiment provides the same electrochemical copper plating method based on the full addition method as in Example 1. The difference is that, further, in the step S1, the electrochemical copper plating reaction system is an acidic system, and the The pH of an acidic system is 2.0.

[0067] Further, in the step S1, the thickness of the copper layer is 4um.

[0068] Further, in the step S1, the rate of copper deposition is 0.5um / min, and the time is controlled at 10min.

[0069] Further, in the step S2, a direct current of 20 ASF is used for electroplating, and the time is controlled at 45 minutes.

[0070] Further, in the step S2, the copper layer is thickened by 8um.

[0071] Further, in the step S2, the total thickness of the copper layer is 30um.

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PUM

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Abstract

The invention belongs to the technical field of PCBs (printed circuit boards), and provides an electrochemical copper plating method based on a fully-additive process. The electrochemical copper plating method is characterized by comprising the following steps of drilling, glue residue removal, film drying, electrochemical copper plating and etching, wherein the electrochemical copper plating process specifically comprises the steps of: S1, adopting a catalytic reduction system, adjusting an electrochemical copper plating reaction system, and forming a uniform and compact copper layer on the surface of a base material or a hole in a copper deposition manner; and S2, in an existing plating solution system, achieving copper layer thickening by taking copper as a soluble anode and titanium as a cathode through electroplating. According to the electrochemical copper plating method, the copper plating rate can be increased, the copper plating binding force and the ductility of the copper layer can be guaranteed, the generation of a redox reaction byproduct Cu2O is controlled through a new graft polymerization catalysis system, the generation probability of disproportionated reaction is reduced, and the reaction rate and stability of an electrochemical copper plating system in a non-current plating layer are controlled.

Description

technical field [0001] The invention belongs to the technical field of PCB, and in particular relates to an electrochemical copper plating method based on a full addition method. Background technique [0002] The manufacturing process of printed circuit board (PCB) mainly includes subtractive method, semi-additive method, full additive method and so on. Among them, the full additive method refers to selectively forming a conductive layer on an insulating substrate. This method has many advantages, such as avoiding side erosion, reducing the thickness of HDI (high-density interconnect) boards, and greatly reducing the waste of copper resources. Therefore, it has received extensive attention and research. However, the traditional full-addition method uses insulating materials as the substrate, and the conductive seed layer must be made first when forming the conductive layer, which not only increases the process, prolongs the production cycle, but also increases the pollution...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/38C25D5/00C25D21/12C23C18/40H05K3/18
CPCC25D3/38C23C18/40C25D5/00C25D21/12H05K3/182
Inventor 刘继承王玲玲邹乾坤
Owner GUANGDONG CHAMPION ASIA ELECTRONICS CO LTD
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