Preparation method of cobalt-germanium alloy thin film with temperature coefficient of resistance tending towards zero
A technology of temperature coefficient of resistance and germanium alloy, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of difficult semiconductor manufacturing process, complicated preparation process, and large resistance, so as to reduce the preparation cost, Good oxidation resistance and the effect of improving temperature resistance
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0043] Specifically, the present invention provides a method for preparing a cobalt-germanium alloy film with a temperature coefficient of resistance tending to zero. As the name implies, the cobalt-germanium alloy film is a film composed of cobalt and germanium elements. In the cobalt-germanium alloy film, The atomic percentage content is 15%-20%, and the temperature coefficient of resistance of the cobalt-germanium alloy thin film is less than 200ppm / °C. The preparation method includes placing the growth substrate in the deposition chamber, and passing through the deposition chamber sequentially or successively. Enter cobalt-containing gas and germanium-containing gas (the gas flow rate can be determined according to the gas type, deposition process and deposition time and other parameters. For example, when the germanium-containing gas is germane, the flow rate of germane is 1sccm~500sccm, and the cobalt-containing gas is 50sccm. 5000 sccm), to prepare the cobalt-germanium a...
Embodiment 1
[0047] In this embodiment, the PECVD process is used to prepare the cobalt-germanium alloy thin film with the temperature coefficient of resistance tending to zero. The preparation method includes the steps:
[0048] Provide a growth substrate, place the growth substrate in a PECVD vacuum chamber, and stabilize the temperature in the PECVD vacuum chamber at 150°C-400°C; specifically, the growth substrate includes but is not limited to a silicon dioxide substrate, It can also be germanium oxide, silicon nitride or other oxide substrates. According to different needs, an adhesion layer or buffer layer such as titanium nitride can also be grown on the growth substrate, and in order to ensure good film deposition quality, Before putting the growth substrate into the PECVD vacuum chamber, the growth substrate can be cleaned and dried, for example, deionized water, absolute alcohol, acetone, absolute alcohol, and deionized water are used to clean and dry the growth substrate in seque...
Embodiment 2
[0053] In this embodiment, the PEALD process is used to prepare the cobalt-germanium alloy thin film with the temperature coefficient of resistance tending to zero. The preparation method includes the steps:
[0054] S1: Provide a growth substrate, place the growth substrate in a PEALD vacuum chamber, and stabilize the temperature in the PEALD vacuum chamber at 150°C-400°C;
[0055] S2: Introduce a cobalt-containing gas (i.e. a cobalt source) into the PEALD vacuum chamber for 1-10s (preferably 3s-8s), and the cobalt-containing gas flow rate can be set as required, such as 2000 sccm, Then pass 500-8000sccm (preferably 1000-2000sccm) of inert gas to purge the cobalt source and by-products that have not reacted on the growth substrate;
[0056] S3: Introduce 500-10000sccm (preferably 1000-2000sccm) of hydrogen for 1-10s, then pass in 500-8000sccm (preferably 1000-2000sccm) of inert gas to purge. Hydrogen and by-products of the growth substrate reaction described above;
[0057]...
PUM
| Property | Measurement | Unit |
|---|---|---|
| temperature coefficient of resistance | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| temperature coefficient of resistance | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More