Composite window structure for improving heat resistance of microwave CVD window

Abstract

The invention discloses a composite window structure for improving heat resistance of a microwave CVD window. The composite window structure comprises a vacuum assembly and a composite window assembly fixedly connected to the vacuum assembly. The vacuum assembly comprises a plurality of metal reflection baffles and a sealing cover used for sealing the metal reflection baffles, wherein the plurality of metal reflection baffles form a sealing cavity, the upper end of the sealing cavity is sealed through an end cover, the metal reflection baffles are integrally connected to a surface plate, and microwave holes are formed in the surface plate; the composite window assembly comprises a first window piece fixed to the plane plate and a second window piece fixedly connected to the end face, away from the first window piece, of the plane plate, and the first window piece and the second window piece are arranged in parallel in a spaced mode. According to the invention, a low-temperature heat shielding layer is formed due to the good heat dissipation characteristic, so that overheating of a traditional microwave window is avoided, and the power value of the microwave fed into the vacuum cavity can be greatly improved.

Description

technical field

[0001] The invention relates to the technical field of vacuum microelectronics, in particular to a compound window structure for improving the heat resistance of microwave CVD windows. Background technique

[0002] Plasma is the fourth state of matter after solid state, liquid state, and gas state, and has a wide range of applications in many fields. To make the matter in the plasma state, it needs to provide a certain amount of energy. As a kind of electromagnetic wave, microwave can easily excite gas into a plasma state in a vacuum environment, so microwave plasma technology has been widely used in many fields.

[0003] A microwave plasma chemical vapor deposition (MPCVD) device generally includes a microwave system, a vacuum system, a gas supply system, and a plasma reaction chamber. A spin-rotating substrate table 6 is arranged in the plasma reaction chamber. Taking the preparation of a diamond film as an example, microwave The microwaves generated by t...

Examples

Embodiment 1

[0027] The material of the microwave window on the upper layer is silicon dioxide, the thickness: 10.0mm; there is no microwave window on the lower layer.

[0028] The microwave input power is 5KW, the pressure in the metal vacuum chamber is 21.0kPa, the gas flow rate is H2:CH4=200:4.0sccm (sccm: standard cubic centimeter per minute), the growth temperature of CVD diamond film is 880°C, and the substrate material is single crystal silicon piece. After working for 8 hours, the thickness of the CVD diamond film was measured, and the calculated growth rate was 6.2 μm / hour: the content of Si in the CVD diamond film was 1.153 ppm through secondary mass spectrometry analysis.

Embodiment 2

[0030] The material of the upper microwave window is silicon dioxide, the thickness is 10.0mm; the lower microwave window is set under it.

[0031] The material of the microwave window in the lower layer is two CVD diamond, the thickness is 1.5 mm; the brazing width of the outer edge is 3.0 mm.

[0032] The microwave input power is 10KW, the pressure in the metal vacuum chamber is 21.0kPa, the gas flow rate is H2:CH4=200:4.0sccm (sccm: standard cubic centimeter per minute), the growth temperature of CVD diamond film is 880°C, and the substrate material is single crystal silicon piece. After working for 8 hours, the thickness of the CVD diamond film was measured, and the growth rate was calculated to be 8.6 μm / hour: the content of Si in the CVD diamond film was 0.218 ppm through secondary mass spectrometry analysis.

[0033] Comparing Example 1 and Example 2, it can be concluded that due to the use of the composite microwave window, the etching effect of the plasma ball on the...

technical field

[0001] The invention relates to the technical field of vacuum microelectronics, in particular to a compound window structure for improving the heat resistance of microwave CVD windows. Background technique

[0002] Plasma is the fourth state of matter after solid state, liquid state, and gas state, and has a wide range of applications in many fields. To make the matter in the plasma state, it needs to provide a certain amount of energy. As a kind of electromagnetic wave, microwave can easily excite gas into a plasma state in a vacuum environment, so microwave plasma technology has been widely used in many fields.

[0003] A microwave plasma chemical vapor deposition (MPCVD) device generally includes a microwave system, a vacuum system, a gas supply system, and a plasma reaction chamber. A spin-rotating substrate table 6 is arranged in the plasma reaction chamber. Taking the preparation of a diamond film as an example, microwave The microwaves generated by t...

Examples

Embodiment 1

[0027] The material of the microwave window on the upper layer is silicon dioxide, the thickness: 10.0mm; there is no microwave window on the lower layer.

[0028] The microwave input power is 5KW, the pressure in the metal vacuum chamber is 21.0kPa, the gas flow rate is H2:CH4=200:4.0sccm (sccm: standard cubic centimeter per minute), the growth temperature of CVD diamond film is 880°C, and the substrate material is single crystal silicon piece. After working for 8 hours, the thickness of the CVD diamond film was measured, and the calculated growth rate was 6.2 μm / hour: the content of Si in the CVD diamond film was 1.153 ppm through secondary mass spectrometry analysis.

Embodiment 2

[0030] The material of the upper microwave window is silicon dioxide, the thickness is 10.0mm; the lower microwave window is set under it.

[0031] The material of the microwave window in the lower layer is two CVD diamond, the thickness is 1.5 mm; the brazing width of the outer edge is 3.0 mm.

[0032] The microwave input power is 10KW, the pressure in the metal vacuum chamber is 21.0kPa, the gas flow rate is H2:CH4=200:4.0sccm (sccm: standard cubic centimeter per minute), the growth temperature of CVD diamond film is 880°C, and the substrate material is single crystal silicon piece. After working for 8 hours, the thickness of the CVD diamond film was measured, and the growth rate was calculated to be 8.6 μm / hour: the content of Si in the CVD diamond film was 0.218 ppm through secondary mass spectrometry analysis.

[0033] Comparing Example 1 and Example 2, it can be concluded that due to the use of the composite microwave window, the etching effect of the plasma ball on the...

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