Groove double-field-plate AlGaN/GaN HEMT device

Abstract

A groove double-field-plate AlGaN / GaN HEMT device comprises a substrate, a buffer layer, a barrier layer and a passivation layer which are sequentially arranged from bottom to top, and a source electrode, a drain electrode and a gate electrode which extend to the barrier layer, with the gate electrode located between the source electrode and the drain electrode. A groove double-field is arranged on the barrier layer and between the gate electrode and the drain electrode. The buffer layer is composed of GaN with the thickness of 2 microns, and the doping concentration is 1 * 10 < 15 > cm <-3 >. The barrier layer is composed of AlGaN with the thickness of 20 nm, and the doping concentration is 1 * 10 < 17 > cm <-3 >. The passivation layer is composed of Si3N4 with the thickness of 50 nm. The lengths of the gate electrode, the source electrode and the drain electrode are all 0.5 [mu]m. The length Lfp1 and the length Lfp2 of the groove double-field-plate structure are 0.3 [mu]m and 0.7 [mu]m respectively, the thickness H + Hfp1 and Hfp2 of the passivation layer below the field plates is 10 nm and 20 nm respectively, and the groove is filled with Si3N4. The electric field peak value is reduced, current collapse is improved, and meanwhile a saturated leakage current finally output by the device cannot be greatly reduced.

Description

technical field [0001] The invention belongs to the technical field of high electron mobility transistors, in particular to a grooved double field plate AlGaN / GaN HEMT device. Background technique [0002] GaN materials have become a research hotspot in the fields of high frequency, high temperature and high power due to their superior properties such as wide bandgap, strong breakdown electric field, and high electron saturation drift velocity. At present, AlGaN / GaN High Electron Mobility Transistors (High ElectronMobility Transistors, HEMTs) are the most advantageous three-terminal devices among GaN-based devices, and are widely used in wireless communication, aerospace, radar and other fields due to their excellent performance. And with the continuous improvement of the GaN epitaxial process level, the production cost has been effectively controlled, and GaN-based devices have become the "core" of high-power, high-frequency devices. However, the potential advantages of Al...

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Problems solved by technology

For the current collapse effect caused by traps in the GaN buffer layer, it is difficult to effectively solve it from the process

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