Silicon carbide double-groove MOSFET integrated with channel diode

A technology of integrating channels and diodes, applied in electrical components, electro-solid devices, circuits, etc., can solve the problems of bipolar degradation effect, non-deterioration of MOSFET performance, and excessive conduction voltage drop of freewheeling diodes, so as to reduce the electric field. peak value, improved reverse conductivity, and improved reliability
CN113990923AActive Publication Date: 2022-01-28UNIV OF ELECTRONICS SCI & TECH OF CHINA
9 Cites 3 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2022-01-28

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
Patent Text Reader

Abstract

The invention belongs to the technical field of power semiconductors, and particularly relates to a silicon carbide double-groove MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) integrated with an channel diode. The MOSFET is mainly characterized in that: firstly, a channel diode is integrated, when a device is in a follow current working mode, the channel diode is conducted to achieve a follow current function, conduction of a body diode is effectively restrained by reducing reverse conduction voltage drop, and meanwhile the influence caused by bipolar degradation is eliminated; and secondly, an electric field is modulated through a P-type region below the source groove, so that the peak of the electric field at the corner of silicon dioxide at the bottom of the gate groove is reduced, and the breakdown voltage and the reliability of the device in a blocking working mode are improved;.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the technical field of power semiconductors, and in particular relates to a silicon carbide double-groove MOSFET with integrated channel diodes. Background technique

[0002] Compared with traditional SiC planar MOS devices, SiC trench gate MOS devices have lower on-resistance due to their larger channel density and reduced influence of the JFET effect. However, SiC trench-gate MOS devices have the problem that the peak electric field of the gate oxide layer is too large. In order to solve this problem, researchers have proposed a double-slot MOSFET, which modulates the electric field through the P-type region under the source trench, so that the corner of the gate trench The peak electric field of the oxide layer is lower than the critical breakdown value, which improves the withstand voltage of the device.

[0003] In converter and inverter systems, a freewheeling diode is usually required in antiparallel with the switching ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More