Semiconductor device forming method and semiconductor device
A semiconductor and device technology, applied to the formation method of semiconductor devices and the field of semiconductor devices, can solve problems such as difficult control, increased electric field strength, and reduced yield
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Embodiment 1
[0086] Including the following steps:
[0087] 201. Clean the semiconductor substrate, and fabricate a gate structure on the semiconductor substrate.
[0088] 202. Using the furnace tube atomic deposition process, grow the first silicon dioxide at 680°C, the first silicon dioxide covers the side and top surfaces of the gate structure and the top surface of the semiconductor substrate outside the gate structure, and the second The thickness of silicon dioxide is equal to the sum of the design target value of 150 Å and the preset thickening value of 150 Å, that is, 300 Å.
[0089] 203. A furnace tube atomic deposition process is used to grow silicon nitride on the surface of the first silicon dioxide at 650° C., with a growth thickness of 300 Å.
[0090] 204. A furnace tube atomic deposition process is used to grow second silicon dioxide on the surface of silicon nitride at 680° C., with a growth thickness of 1000 Å.
[0091] 205. Dry etching is used to etch the second silicon...
Embodiment 2
[0095] Including the following steps:
[0096] 301. Clean the semiconductor substrate, and fabricate a gate structure on the semiconductor substrate.
[0097] 302. Using a chemical vapor deposition process, grow first silicon dioxide, the first silicon dioxide covers the side and top surfaces of the gate structure and the top surface of the semiconductor substrate outside the gate structure, and the first silicon dioxide The thickness is equal to the sum of the design target value of 100 Å and the preset thickening value of 100 Å, that is, 200 Å.
[0098] 303. Using a low-pressure chemical vapor deposition process, silicon nitride is grown on the surface of the first silicon dioxide to a thickness of 500 Å.
[0099] 304 . Dry etching is used to etch the silicon nitride in the target etching area and the first silicon dioxide of 40 Å to form a second sub-sidewall, and the second sub-sidewall is silicon nitride. Wherein, the target etching area includes the top surface of the ...
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