Ion-doped thin film transistor and preparation method thereof

Abstract

The invention relates to an ion-doped thin film transistor, which comprises a substrate, a gate electrode arranged on one surface of the substrate, an insulating layer arranged on the other surface of the substrate, a metal oxide semiconductor layer arranged on the surface of the insulating layer, and a source electrode and a drain electrode arranged on the surface of the metal oxide semiconductor layer. The insulating layer is an ion-doped high dielectric constant material insulating layer, and ions bring abundant charges, so that the device can form double electric layers and be doped with ions more easily, the conductivity of the metal oxide semiconductor layer is increased, and the device is suitable for simulating the long-time memory characteristic of biological synapse. The thin film transistor device is enabled to have longer relaxation time. The relaxation time of a traditional thin film transistor is about tens of milliseconds, but the relaxation time of the thin film transistor doped with ions is 200-300 milliseconds. The relaxation time of the thin film transistor doped with ions and that of the biological synapse are in the same order of magnitude, so that the thin film transistor device is more suitable for simulating the biological synapse.

Description

technical field [0001] The invention relates to an ion-doped thin film transistor and a preparation method thereof, belonging to the technical field of semiconductor devices. Background technique [0002] Artificial synaptic electronics are an important component of neuromorphic computing systems that can go beyond the limitations of von Neumann structures. Although many two-terminal memory devices have been proposed at this stage for simulating biological synapses, they suffer from some intractable problems, including nonlinear switching, high device conductance, and write noise, all of which reduce accuracy and energy efficiency, The two-terminal memory device is limited to a smaller volume. Recently, it has been reported that a three-terminal transistor is used as a device to simulate biological synapses. Since the channel conductance of the three-terminal transistor can be adjusted by applying positive and negative voltages, and does not require an additional pulse to a...

AI Technical Summary

Problems solved by technology

However, few people have specifically studied how to make the three-terminal artificial synapse thin film transistor more realistically simulate biological synapses, especially the long-term memory characteristics of biological synapses, so that they have better synaptic characteristics and provide a better future for future research. Lays a good foundation for accurately simulating synaptic properties

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