Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Single-layer infrared focal plane detector

An infrared focal plane and detector technology, applied in the field of infrared detection, can solve the problems of low performance, low pixel scale, and poor consistency of infrared focal plane detectors, and achieve high-capacity large-scale integrated production, small chip area, low cost effect

Pending Publication Date: 2021-10-22
BEIJING NORTH GAOYE TECH CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides a single-layer infrared focal plane detector, which solves the problems of low performance, low pixel scale and low yield rate of traditional MEMS process infrared focal-plane detectors. poor consistency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single-layer infrared focal plane detector
  • Single-layer infrared focal plane detector
  • Single-layer infrared focal plane detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0068] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that, in the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other.

[0069] In the following description, many specific details are set forth in order to fully understand the present disclosure, but the present disclosure can also be implemented in other ways than described here; obviously, the embodiments in the description are only some of the embodiments of the present disclosure, and Not all examples.

[0070] figure 1 A schematic diagram of a three-dimensional structure of an infrared focal plane detector pixel provided by an embodiment of the present disclosure, figure 2 A schematic cross-sectional structure diagram of an infrared focal plane detector pixel provided by an embodiment of the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a single-layer infrared focal plane detector, a CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared focal plane detector are both prepared by using a CMOS process, and the CMOS manufacturing process comprises a metal interconnection process, a through hole process, an IMD process and an RDL process. The columnar structure in the CMOS infrared sensing structure comprises at least one layer of solid columnar structure and / or at least one layer of hollow columnar structure, the sacrificial layer is used for enabling the CMOS infrared sensing structure to form a hollow structure, the material for forming the sacrificial layer comprises at least one of silicon, germanium or germanium-silicon, the sacrificial layer is corroded by adopting an etching gas and adopting a post-CMOS process. The etching gas comprises at least one of xenon fluoride, chlorine gas, bromine gas, carbon tetrachloride and chlorofluorohydrocarbon. According to the technical scheme, the problems that a traditional MEMS technology infrared focal plane detector is low in performance, low in pixel scale, low in yield, poor in consistency and the like are solved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to a single-layer infrared focal plane detector. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared focal plane detector adopts the method of combining the measurement circuit and the infrared sensing structure. -Electro-Mechanical System, micro-electro-mechanical system) process preparation, resulting in the following problems: [0004] (1) The infrared sensing structure is prepared by MEMS...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/20
CPCG01J5/20G01J2005/202
Inventor 翟光杰武佩潘辉翟光强
Owner BEIJING NORTH GAOYE TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com