Manufacturing method of aluminum nitride substrate template
A production method, aluminum nitride technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems affecting product growth efficiency, affecting AlN quality, uneven distribution of holes, etc., to improve photoelectric parameters and The effect of chip reliability, low cost and small internal stress
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[0037] The present invention will be further described below in conjunction with the accompanying drawings and examples, and the contents of the examples are not intended to limit the protection scope of the present invention.
[0038] In order to overcome the problems existing in the prior art, the present invention proposes a method for manufacturing an aluminum nitride substrate template, which etches the low-temperature aluminum nitride layer on the low-temperature aluminum nitride layer through an in-situ high-temperature etching process. Holes with uniform distribution and uniform size can be produced, so as to solve the problem that the internal stress cannot be released due to lattice mismatch during the low-temperature aluminum nitride single crystal epitaxial growth process, and greatly improve the crystal quality of the aluminum nitride layer and the UVC-LED structure , photoelectric performance, reliability, etc.
[0039] figure 1 A flow chart of the manufacturing...
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