An adjustable differential active inductance circuit
An active inductance, adjustable technology, applied in the direction of transformer/inductor circuit, etc., can solve the problems of limiting the effective operating frequency range of the inductance and the inductance adjustment range, reducing the resonant frequency of the inductance, large power consumption and noise, etc., to achieve adjustable The effect of high range and precision, high chip integration, and low power consumption
Active Publication Date: 2022-03-25
广州华速信息技术有限公司
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, due to the parasitic impedance and parasitic capacitance of the transistor, the effective operating frequency range and inductance adjustment range of the inductance are limited; at the same time, the active inductance is designed with an operational amplifier, and the structure is relatively complex, which will generate large power consumption and noise, and reduce the resonance of the inductance frequency
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0019] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0020] Such as figure 1 As shown, the adjustable differential active inductance circuit in this embodiment includes: a variable capacitor Cb (1), adjustable PMOS transistor loads M1, M2 (2), a first pair of cross-coupled NMOS transistors M3, M4 (3), a second Two cross-coupled NMOS transistor pairs M5, M6 (4).
[0021] The adjustable PMOS transistor load includes a first P-type MOS transistor M1 and a second P-type MOS transistor M2, the source of the first P-type MOS transistor M1 is connected to the source of the second P-type MOS transistor M2 and then connected to the power supply VDD, The gate of the first P-type MOS transistor M1 is connected to the gate of the second P-type MOS transistor M2 and then connected to the adjustment voltage Vtune, the drain of the first P-type MOS transistor M1 is connected to the input terminal Vin+ of...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses an adjustable differential active inductance circuit, which includes a variable capacitor, an adjustable PMOS transistor load, a first cross-coupled NMOS transistor pair, a second cross-coupled NMOS transistor pair, and the second cross-coupled NMOS transistor pair is connected to two A variable capacitor Cb, the second cross-coupled NMOS transistor pair is connected to the adjustable PMOS transistor load through the first cross-coupled NMOS transistor pair, and the adjustable PMOS transistor load is connected to the input terminal Vin+ and the input terminal between the first cross-coupled NMOS transistor pair. Vin‑. The adjustable differential active inductance circuit of the present invention expands the adjustment range of the inductance value and the tuning range of the Q value by adjusting the gate voltage of the variable resistance and the load transistor, and has higher adjustment precision of the inductance value and chip integration.
Description
technical field [0001] The invention belongs to the technical field of active inductance manufacturing, and in particular relates to an adjustable differential active inductance circuit. Background technique [0002] With the continuous development of CMOS technology, the size of large-scale integrated circuits continues to shrink. In the application of high-frequency communication technology, passive inductive devices occupy a large area of the chip system, such as in voltage-controlled oscillators, equalizers, low-noise amplifiers, In modules such as filters, the application of passive inductors inevitably brings about an increase in chip costs. [0003] Active inductance technology uses gyrator circuits to generate equivalent inductance values, which can replace passive inductance in communication chip systems in some application scenarios. However, due to the parasitic impedance and parasitic capacitance of the transistor, the effective operating frequency range and i...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01F27/42
CPCH01F27/42
Inventor 陈阳曾嵘閤兰花唐继斐吴俊王浩仇兆炀
Owner 广州华速信息技术有限公司