Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin film pressure sensor and preparation method and application thereof

A thin film pressure and sensor technology, applied in the field of sensors, can solve the problems of small range of semiconductor strain gauges, poor thermal stability, serious nonlinearity, etc., and achieve the effect of good piezoresistive effect, good stability and large piezoresistive coefficient

Pending Publication Date: 2021-10-26
GUANGDONG UNIV OF TECH
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the measuring range of the semiconductor strain gauge is also small, and the thermal stability is poor, and the nonlinearity is serious, so it is only suitable for the measurement of small pressure, and cannot be applied to occasions accompanied by high temperature. The sensitivity is also very high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film pressure sensor and preparation method and application thereof
  • Thin film pressure sensor and preparation method and application thereof
  • Thin film pressure sensor and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0066] The present invention also provides a preparation method for the above thin film pressure sensor, comprising the following steps:

[0067] Step 1: depositing the first insulating layer by magnetron sputtering;

[0068] Step 2: Deposit a piezoresistive sensitive layer on the first insulating layer by using a sensitive element mask and magnetron sputtering; the piezoresistive sensitive layer is Cu 84 mn 12 Ni 4 ;

[0069] Step 3: using an electrode mask and magnetron sputtering to deposit an electrode layer on the first insulating layer, and the electrode layer is connected to the piezoresistive sensitive layer;

[0070] Step 4: using magnetron sputtering to deposit a second insulating layer, so that the electrode layer and the piezoresistive sensitive layer are enclosed between the second insulating layer;

[0071] Step 5: Prepare a protective layer on the second insulating layer by arc ion plating.

[0072] In the present invention, the wear-resistant protective la...

Embodiment 1

[0091] This embodiment is the preparation of a thin film pressure sensor, and the specific preparation steps are as follows:

[0092] 1. Substrate pretreatment

[0093] (1) Solvent cleaning treatment: first use deionized water to dissolve the cemented carbide substrate for ultrasonic cleaning for 15 minutes, and then use 95% alcohol for ultrasonic cleaning for 15 minutes.

[0094](2) Glow and ion source bombardment cleaning treatment: use glow to clean the surface of the substrate for 20 minutes, the Ar flow rate is 300 sccm, the cavity pressure is 0.6Pa, and the bias voltage is -600V; then use the Booster ion source to clean the substrate for 10 minutes, The Ar flow rate is 420sccm, the chamber pressure is 0.8Pa, the substrate bias voltage is -200V, and the ion source power is 1200W.

[0095] 2. First deposit the metal AlN insulating layer on the surface of the cemented carbide substrate by magnetron sputtering, and deposit Al by ALD 2 o 3 fill layer

[0096] (1) Al metal...

Embodiment 2

[0114] This embodiment is the preparation of a thin film pressure sensor.

[0115] The difference between this embodiment and embodiment 1 is: deposition of CuMnNi film:

[0116] After the pre-sputtering is completed, the mask plate is fixed and tightly attached to the metal substrate coated with an insulating layer by using a clamp, and then the whole is fixed on the furnace cavity turret of the PVD deposition equipment. Firstly, the cavity temperature is heated and kept at 400°C, the local vacuum is pumped to below 5mPa, Ar is introduced, the flow rate is 300sccm, the bias power is turned on, the bias value is -600V, and the substrate covered with the mask is illuminated. Clean with light for 10 minutes, then reduce the bias voltage to -200V, turn on the power of the Booster ion source, set the power of the ion source to 1200W, and etch the substrate covered with the mask for 2 minutes. Then adjust the Ar flow value to about 240 sccm, maintain the chamber pressure at 0.5 Pa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of sensors, in particular to a thin film pressure sensor and a preparation method and application thereof. According to the invention, the thin film pressure sensor comprises a metal matrix, a first insulating layer, a piezoresistive sensitive layer, a second insulating layer and a wear-resistant protective layer which are arranged from bottom to top, an electrode layer is also arranged between the first insulating layer and the second insulating layer, and the electrode layer is connected with the piezoresistive sensitive layer. According to the invention, the electrode layer and the piezoresistive sensitive layer are packaged between the first insulating layer and the second insulating layer, the effects of insulation and stable signal transmission can be achieved, and the wear-resistant protective layer can ensure that the sensor is not affected by an external processing environment, so that the sensor can be normally used in a severe working environment. The piezoresistive sensitive layer is made of Cu84Mn12Ni4. The Cu84Mn12Ni4 in the thin film pressure sensor is good in piezoresistive effect, fast in response and good in linearity, so that the thin film pressure sensor is large in piezoresistive coefficient, high in linearity and good in stability.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a thin film pressure sensor and its preparation method and application. Background technique [0002] A sensor is a very important detection device, which can convert non-electrical physical quantities (physical, biological, etc.) in various environments into electrical signals and other output signals according to a certain law. Today, with the rapid development of smart homes, portable devices and the Internet of Things, sensor technology will receive more and more attention. The sensor is the source of the information detection system. It is an indispensable device in analysis, detection and even control, and to a certain extent, it is also an important component that determines the performance of the system. With the development of technology, there are bound to be more stringent requirements for sensors. It is required that the sensor has good long-term stability, stable o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/113H01L41/18H01L41/23G01L1/18H10N30/30H10N30/02H10N30/85
CPCG01L1/18H10N30/85H10N30/302H10N30/02
Inventor 王启民曹彧吴正涛郇静张银团曾瑞凯
Owner GUANGDONG UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com