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Micro or nano structure inertia sensor and its production method

A technology of inertial sensor and micro-nano structure, applied in the field of nano-electromechanical system and sensing, can solve the problems of high aspect ratio, unrealizable flexible support, small diameter, etc., to ensure production accuracy, improve sensitivity, and simple production method Effect

Inactive Publication Date: 2009-07-29
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the flexible support processed based on MEMS technology cannot realize the extremely small diameter and extremely high aspect ratio of one-dimensional nanomaterials.

Method used

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  • Micro or nano structure inertia sensor and its production method
  • Micro or nano structure inertia sensor and its production method
  • Micro or nano structure inertia sensor and its production method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Embodiment 1, press figure 1 with image 3 As shown, the manufacture of an inertial sensor includes a silicon wafer substrate 1, and the substrate 1 is heavily doped with phosphorus as a driving electrode (bottom electrode). Deposit a layer thickness of 400 on the silicon substrate 1 of silica 11, and 1500 The silicon nitride 12 forms the insulating layer 2, and the first strip-shaped electrode 3 and the second electrode 4 with a length of 100 μm × a height of 2 μm (the width of which is coordinated according to the pattern distribution in the layout) are respectively arranged on the two sides of the insulating layer 2. for polysilicon. A group of 5 resonant beams 5 is overlapped between the first electrode 3 and the mass block 6, and another group of 5 resonant beams 5 is lapped between the second electrode 4 and the mass block 6. At the same time, the carbon nanotubes are also As the electrical leads for the electrical connection between the mass 6 and the elect...

Embodiment 2

[0040] according to figure 1 As shown, the manufacture of an inertial sensor includes a silicon wafer substrate 1, and the substrate 1 is heavily doped with phosphorus as a driving electrode (bottom electrode). A layer thickness of 1000 is deposited on the silicon substrate 1 of silica, and 1500 Silicon nitride forms an insulating layer 2, and on both sides of the insulating layer 2, a first strip-shaped electrode 3 and a second electrode 4 with a length of 100 μm×a height of 2 μm (the width of which is coordinated according to the layout in the layout) are respectively arranged. The electrodes are polysilicon. A group of 10 platinum metal nanowires is used as a resonant beam 5 with a length of 15 μm and a diameter of 20 nanometers. The resonant beam 5 passes through the mass block 6 from the first electrode 3 to the second electrode 4. The nanowires are also used as electrical leads for electrical connection between the mass block 6 and the electrodes 3 and 4 . By corro...

Embodiment 3

[0042] according to figure 1 As shown, the manufacture of an inertial sensor includes a silicon wafer substrate 1, and the substrate 1 is heavily doped with phosphorus as a driving electrode (bottom electrode). Deposit a layer thickness of 500 on the silicon substrate 1 of silica and 1700 The insulating layer 2 is formed of silicon nitride, and the other structures are the same as in the embodiment 1, except that the resonant beam 5 uses GaP semiconductor nanowires, the length of which is between 15 μm and the diameter of 60 nanometers. The mass block 6 is located at the center of the upper part of the insulating layer 2, the mass block is suspended under the support of the resonant beam, and the gap (air gap) between the insulating layer 2 and the mass block 6 is 2.5 μm; and the mass block 6 passes through 2 groups The elastic beam 5 of carbon nanotubes is fixed in the middle of the first electrode 3 and the second electrode 4, and the gap between the mass block 6 and the...

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Abstract

The invention relates to an inertial sensor body with a micro-nano structure, comprising: a silicon substrate and an insulating layer arranged on it, two strip-shaped electrodes arranged on both sides of the upper part of the insulating layer; two groups of resonant beams of one-dimensional nanomaterials respectively Place between the mass block and the first electrode, and between the mass block and the second electrode, or a group of resonant beams pass through the mass block from the first electrode to the second electrode, and the resonant beam is at the contact surface with the electrode and the mass block Fixed; the mass block is located at the center of the upper part of the insulating layer, and the mass block is suspended under the support of the resonant beam; the entire substrate is used as a driving electrode, and a window is opened on the insulating layer on the silicon substrate to form a bonding pad, which is used as the lead-out joint of the bottom electrode; The first electrode and the second electrode have lead wires connected to the pads respectively; at the same time, the one-dimensional nanometer material is also used as the mass block and the electrode and the electric lead wire for electrically connecting the electrodes. The preparation method of the present invention includes using a silicon chip as a base material, micro-processing the surface of the silicon chip and performing directional assembly of one-dimensional nanometer materials.

Description

technical field [0001] The invention relates to the field of nano-electromechanical systems (NEMS) and sensing technology, in particular to an inertial sensor body based on a micro-nano structure capable of realizing high-sensitivity measurement and a manufacturing method thereof. Background technique [0002] Inertial sensors based on micro-electromechanical systems (MEMS), including micro-gyroscopes and micro-accelerometers, have broad application prospects in industrial automation, automobiles, home appliances, construction, aerospace, and defense. Usual miniature inertial sensors generally have a structure of micro-beams supporting mass blocks, and their materials are basically materials commonly used in micro-machining—silicon or metal. on the order of microns. Resonant sensors have the advantages of high sensitivity and convenient digital output, and are considered to be a promising sensing method. The working principle of the resonant micro-accelerometer is: drive t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B3/00B82B1/00G01C19/00G01P15/00
Inventor 叶雄英谭苗苗周兆英王晓皓
Owner TSINGHUA UNIV
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