Radio frequency power amplifier based on transformer matching network

Abstract

An embodiment of the invention discloses a radio frequency power amplifier based on a transformer matching network. The radio frequency power amplifier comprises an input matching network, a first-stage single-path amplifying circuit, a first inter-stage matching network, a second-stage double-path amplifying circuit, a second inter-stage matching network, a third-stage four-path amplifying circuit and an output matching network which are connected in sequence, wherein the first inter-stage matching network comprises a first transformer T1, the second inter-stage matching network comprises two second transformers T2, and the output matching network comprises two third transformers T3 and a fourth transformer T4. According to the invention, transformer matching is adopted for inter-stage matching and output matching, so a layout area is effectively reduced, additional insertion loss is avoided, and the optimization effect on gain and output return loss is remarkably improved.

Description

technical field [0001] The invention relates to the technical field of power amplifiers, in particular to a radio frequency power amplifier based on a transformer matching network. Background technique [0002] As an important part of the transmitter, the RF power amplifier is located at the final stage of the transmitter. Its main function is to amplify the RF signal of the previous stage without distortion, and send the amplified signal from the antenna end. According to different application scenarios, power amplifiers need to achieve different output power, linearity, efficiency, etc., and thus ensure that signals can be received safely, effectively, and reliably at an appropriate distance. The existing traditional impedance matching network can be composed of reactance elements with lumped parameters (such as capacitors and inductors), and can also be composed of distributed parameter elements (such as microstrip lines and striplines). A typical matching network topolo...

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Problems solved by technology

The parallel connection of multiple transistors will cause the impedance value of its input and output terminals to be very small, and it will be very difficult to design matching, whether it is "L" type, " "Type or "T" type matching network, both require multiple topological structures to be cascaded or add reactive components to match

However, adding cascaded topological structures or reactive components will not only increase the layout area, but also increase the cost of tape-out; each additional topology or reactive components will also increase the insertion loss of the matching structure, which will affect the overall The gain and output power of the circuit have a great influence

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