Memory and manufacturing method thereof

A memory and storage layer technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., to achieve the effect of saving occupied area and complexity, facilitating miniaturization and high integration, and saving surface area

Pending Publication Date: 2021-11-02
CHANGXIN MEMORY TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the current market puts forward higher and higher requirements on the storage performance an

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  • Memory and manufacturing method thereof
  • Memory and manufacturing method thereof
  • Memory and manufacturing method thereof

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Example Embodiment

[0082] The technical solutions of the present application can be applied to the design and manufacture of semiconductor memories, for example, commonly used semiconductor memories such as DRAM. A common DRAM uses a capacitor to store charges, and the value of a binary bit (bit) is represented by the amount of charge stored, that is, a storage unit can be used to represent a logic state of a bit. Due to phenomena such as leakage current in the transistor, the stored charge is prone to loss, thereby affecting the stability of data storage. Therefore, DRAM needs to be periodically charged and discharged, and the stored data is refreshed to realize dynamic storage.

[0083] Considering that the capacitor structure requires two capacitor plates and a dielectric layer, it needs to occupy a large space size, which makes it difficult to reduce the size of a single storage unit, and the overall size of the memory is also limited by this bottleneck. Therefore, the embodiment of the pre...

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Abstract

The embodiment of the invention discloses a memory and a manufacturing method thereof. The memory comprises: a substrate; at least one pair of transistors on the surface of the substrate, wherein conducting channels of the transistors extend in a direction perpendicular to the surface of the substrate; and storage layers. The storage layers are located on one sides of the transistors and are communicated with the conducting channels of the transistors, and the pair of transistors are located between the two storage layers corresponding to the pair of transistors; and the storage layers are used for storing charges and performing charge transfer with the conducting channels communicated with the storage layers.

Description

technical field [0001] The embodiment of the present application relates to a semiconductor manufacturing technology, and relates to but not limited to a memory and a manufacturing method thereof. Background technique [0002] With the continuous growth of semiconductor market demand, semiconductor memory technology develops rapidly, memory manufacturing technology, especially Dynamic Random Access Memory (DRAM, Dynamic Random Access Memory) technology has been developed rapidly, and occupies a major position in the memory market. A common DRAM unit consists of a transistor (Transistor) and a capacitor (Capacitor) to form a 1TlC structure, and the logic state is distinguished by whether the charge is stored on the capacitor. However, the current market places higher and higher requirements on the storage performance and cell size of the memory, which brings severe challenges to the design and manufacture of the memory. Contents of the invention [0003] In view of this, a...

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Application Information

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IPC IPC(8): H01L27/108H01L21/8242
CPCH10B12/01H10B12/00
Inventor 张魁
Owner CHANGXIN MEMORY TECH INC
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