Memory and manufacturing method thereof
A memory and storage layer technology, which is applied in semiconductor/solid-state device manufacturing, transistors, electrical components, etc., to save occupied area and complexity, facilitate miniaturization and high integration, and save surface area
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[0081] The technical solutions of the present application can be applied to the design and manufacture of semiconductor memories, for example, commonly used semiconductor memories such as DRAM. A common DRAM uses a capacitor to store charges, and the value of a binary bit (bit) is represented by the amount of charge stored, that is, a storage unit can be used to represent a logic state of a bit. Due to phenomena such as leakage current in the transistor, the stored charge is prone to loss, thereby affecting the stability of data storage. Therefore, DRAM needs to be periodically charged and discharged, and the stored data is refreshed to realize dynamic storage.
[0082] Considering that the capacitor structure requires two capacitor plates and a dielectric layer, it needs to occupy a large space size, which makes it difficult to reduce the size of a single storage unit, and the overall size of the memory is also limited by this bottleneck. Therefore, the embodiment of the pre...
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