Memory and manufacturing method thereof

Abstract

The embodiment of the invention discloses a memory and a manufacturing method thereof. The memory comprises: a substrate; at least one pair of transistors on the surface of the substrate; a conducting channel of the transistor extending in a direction perpendicular to the surface of the substrate; and a storage layer. The storage layer is located on the side face of each transistor in the direction perpendicular to the surface of the substrate. The storage layers are communicated with conducting channels of the transistors, and any storage layer is located between one pair of transistors and used for storing charges and conducting charge transfer with the communicated conducting channels.

Description

technical field [0001] The embodiment of the present application relates to a semiconductor manufacturing technology, and relates to but not limited to a memory and a manufacturing method thereof. Background technique [0002] With the continuous growth of semiconductor market demand, semiconductor memory technology develops rapidly, memory manufacturing technology, especially Dynamic Random Access Memory (DRAM, Dynamic Random Access Memory) technology has been developed rapidly, and occupies a major position in the memory market. A common DRAM unit consists of a transistor (Transistor) and a capacitor (Capacitor) to form a 1TlC structure, and the logic state is distinguished by whether the charge is stored on the capacitor. However, the current market places higher and higher requirements on the storage performance and cell size of the memory, which brings severe challenges to the design and manufacture of the memory. Contents of the invention [0003] In view of this, a...

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Problems solved by technology

However, the current market puts forward higher and higher requirements on the storage performance and cell size of the memory, which brings severe challenges to the design and manufacture of the memory.

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