Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for controlling warping form of ultrathin germanium wafer

A control method and technology of germanium slices, which are applied in the fields of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve problems such as research on the warping shape control of germanium slices, and achieve high processing efficiency Effect

Pending Publication Date: 2021-11-05
CHINA ELECTRONICS TECH GRP NO 46 RES INST
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In summary, in the relevant patents, although there are researches on the processing of germanium wafers, there is no research on the warpage morphology control of germanium wafers.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for controlling warping form of ultrathin germanium wafer
  • Method for controlling warping form of ultrathin germanium wafer
  • Method for controlling warping form of ultrathin germanium wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] The diameter of the germanium sheet is 100±0.2mm, the resistivity is 0.01~0.03Ω·cm, the thickness is 295±15μm, and the crystal orientation is P to (111)9°, such as figure 1 , figure 2 shown.

[0040] (1) The germanium slices are graded according to the thickness of 2 μm, and the germanium slices are placed face down in the star wheel of the double-sided grinding machine, and 16 germanium slices are placed in each star wheel, and the lower plate of the grinder is set when grinding Rotate counterclockwise and the upper plate rotates clockwise. The speed ratio of the upper and lower plates is set to 1:4. The ratio of the grinding liquid is water: abrasive sand: additive A: additive B=4:2:0.1:0.1.

[0041] Grinding is carried out as follows:

[0042] 1) The pressure is 50Kg, the rotation speed of the lower plate is 2rpm, the flow rate of the grinding liquid is 1400ml / min, and the time is 1min;

[0043] 2) The pressure is 70Kg, the rotation speed of the lower plate is 5r...

Embodiment 2

[0053] The diameter of the germanium sheet is 100±0.2mm, the resistivity is 0.03~0.05Ω·cm, the thickness is 310±15μm, and the crystal orientation is P to (111)9°, such as figure 1 , figure 2 shown.

[0054] (1) The germanium slices are graded according to the thickness of 3 μm, and the germanium slices are placed face down in the star wheel of the double-sided grinding machine, and 16 germanium slices are placed in each star wheel, and the lower plate of the grinder is set when grinding Rotate counterclockwise and the upper plate rotates clockwise. The speed ratio of the upper and lower plates is set to 1:5. The ratio of the grinding liquid is water: abrasive sand: additive A: additive B=4:2:0.1:0.1.

[0055] Grinding is carried out as follows:

[0056] 1) The pressure is 60Kg, the rotation speed of the lower plate is 3rpm, the flow rate of the grinding liquid is 1600ml / min, and the time is 1min;

[0057] 2) The pressure is 80Kg, the rotation speed of the lower plate is 5r...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for controlling the warping form of an ultrathin germanium wafer. The method comprises the following steps of: 1, mechanically grinding a germanium cutting wafer, and preliminarily controlling the warping direction of the germanium wafer while removing cutting damage by grinding the germanium wafer; 2, carrying out acid corrosion on the germanium ground wafer by adopting an acid corrosion machine, removing the grinding damage of the germanium wafer through the acid corrosion process, and optimizing the warping form of the germanium wafer; 3, conducting single-face removal on the back surface of the germanium wafer through a grinding machine, and further controlling the warping appearance of the germanium wafer through small-removal-amount single-face grinding; and 4, conducting weak base corrosion on the germanium ground wafer through alkaline corrosion liquid, removing stress through weak corrosion of a germanium wafer alkaline liquid, and improving the surface quality and mechanical strength of the germanium wafer. By means of the method, warping form control over the ultrathin germanium wafer in the thinning machining process is achieved, the machining efficiency is high, and the warping form of the germanium wafer can be well controlled. The ultrathin germanium wafer prepared by the method is low in fragmentation rate in the subsequent epitaxial process.

Description

technical field [0001] The invention belongs to the technical field of preparation of ultra-thin germanium slices, and in particular relates to a method for controlling the warping morphology of ultra-thin germanium slices. Background technique [0002] In the preparation of triple-junction gallium arsenide solar cells for space power supplies, the germanium single-crystal polished wafer not only plays the role of substrate support, but also plays the role of the bottom cell. The quality of germanium single crystal polished wafer directly determines the quality of triple junction gallium arsenide solar cells. With the continuous weight reduction requirements of the battery system, the required thickness of the germanium sheet is also gradually reduced. The reduction in thickness leads to more elastic characteristics of germanium wafers in multiple machining steps such as slicing, chamfering, grinding, corrosion, polishing, etc. Improper control can easily lead to a decrease...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L31/18B24B1/00
CPCH01L21/02008H01L21/02013H01L21/02019H01L21/02035H01L31/1808B24B1/00Y02P70/50
Inventor 杨静韩焕鹏张伟才王雄龙于妍杨洪星陈晨李聪索开南
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST