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Polishing solution and polishing method

A technology of grinding liquid and abrasive grains, which is applied in the field of grinding liquid, can solve problems such as inability to focus and insufficient formation of fine wiring structures, etc., and achieve the effect of high grinding speed

Pending Publication Date: 2021-11-09
RESONAC CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If there are irregularities on the surface of the planarized substrate, problems such as inability to focus in the exposure process or insufficient formation of a fine wiring structure may occur.

Method used

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  • Polishing solution and polishing method

Examples

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Embodiment

[0122]Hereinafter, the present invention will be described in more detail based on examples. However, the present invention is not limited to these Examples unless the technical idea of ​​the present invention is deviated from. For example, the type and compounding ratio of the grinding liquid material can also be types and ratios other than those described in this embodiment, and the composition and structure of the grinding object can also be other than those described in this embodiment. composition and structure.

[0123]

[0124] After putting 40 kg of cerium carbonate hydrate into an alumina container, it baked in air at 830 degreeC over 2 hours, and obtained 20 kg of yellow-white powder. The powder was phase-identified by X-ray diffraction, and it was confirmed that the powder contained polycrystalline cerium oxide. When the particle size of the powder obtained by firing was observed by SEM, it was 20 to 100 μm. Next, 20 kg of cerium oxide powder was dry-pulverized...

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Abstract

A polishing solution containing: abrasive grains that include a metal oxide; at least one hydroxy acid compound selected from the group consisting of hydroxy acids having the structure expressed in formula (A1), and salts thereof; and water. [In the formula, R11 represents a hydrogen atom or a hydroxy group, R12 represents a hydrogen atom, an alkyl group, or an aryl group, n11 represents an integer greater than or equal to 0, and n12 represents an integer greater than or equal to 0. However, the case in which both R11 and R12 are hydrogen atoms is excluded.].

Description

technical field [0001] The invention relates to a grinding liquid and a grinding method using the grinding liquid. Background technique [0002] In the field of semiconductor manufacturing, along with the high performance of super LSI devices, there is a limit to achieving both high integration and high speed in the miniaturization technology on the extension line of the conventional technology. Therefore, a technology (that is, a technology of multilayering wiring) is being developed to achieve high integration in the vertical direction while advancing the miniaturization of semiconductor elements. This technique is disclosed, for example, in Patent Document 1 below. [0003] In the steps of manufacturing a device in which wiring is multilayered, there is a CMP (Chemical Mechanical Polishing) technique as one of the most important techniques. The CMP technique is a technique of planarizing the surface of a base after forming a material to be ground on a substrate by chemi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304C09K3/14
CPCH01L21/31053C09G1/02C09K3/1409C09K3/1454H01L21/30625H01L21/304
Inventor 大塚祐哉南久贵小林真悟小峰真弓高桥寿登
Owner RESONAC CORPORATION