Epitaxial furnace purging and cooling system, method and device, electronic equipment and storage medium

Abstract

The invention relates to the technical field of epitaxial growth, and particularly discloses an epitaxial furnace purging and cooling system, method and device, electronic equipment and a storage medium. The system comprises a cooling chamber which is used for placing an epitaxial wafer and is filled with purging gas for purging and cooling the epitaxial wafer, a gas thermometer used for acquiring first temperature information of the purging gas, a temperature adjusting mechanism, a thermodetector used for acquiring second temperature information of the epitaxial wafer, a gas circulation mechanism, and a controller used for controlling the purging gas to circularly flow so as to circularly purge and cool the epitaxial wafer, and controlling the temperature adjusting mechanism to adjust the first temperature information of the purging gas according to the second temperature information so as to gradually cool the epitaxial wafer. The system controls the temperature adjusting mechanism to adjust the first temperature information of the purge gas according to the second temperature information, and prevents the epitaxial wafer from generating normative deformation and dislocation when the epitaxial wafer is cooled due to overlarge temperature difference between the purge gas and the epitaxial wafer.

Description

technical field [0001] The present application relates to the field of epitaxial growth technology, in particular, to an epitaxial furnace purge cooling system, method, device, electronic equipment and storage medium. Background technique [0002] Devices made of semiconductor materials are important basic products of the electronics industry and are widely used in satellites, rockets, automobiles, communications and other fields. The production process of semiconductor materials is complicated, and the epitaxy process is a key process in the production process of semiconductor materials; at the end of the epitaxial growth process, the epitaxial wafer needs to be placed in the cooling chamber for purging and cooling. [0003] The existing purge cooling method is generally to directly send the purge gas continuously into the cooling chamber to cool the epitaxial wafers, and take out the cooled epitaxial wafers regularly according to the cooling experience. In this purge cool...

AI Technical Summary

Problems solved by technology

In this purge cooling method, the temperature of the purge gas cannot be adjusted according to the current temperature of the epitaxial wafer, and the epitaxial wafer is prone to thermal shrinkage due to the excessive temperature difference between the gas and the epitaxial wafer and the difference in the crystal lattice and thermal expansion coefficient of the epitaxial wafer. and stress, which eventually lead to the epitaxial wafers appearing normal deformation and dislocation, resulting in the deterioration of the quality of the epitaxial wafers

[0004] For the above problems, there is no effective technical solution

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