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High-density three-dimensional multilayer memory and preparation method thereof

A three-dimensional multi-layer and memory technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems that cannot meet the requirements of mass data storage, large series resistance of memory cells, and affect the performance of memory. The parameters are easy to control, the interlayer resistance is low, and the consistency is good

Pending Publication Date: 2021-11-12
CHENGDU PPM TECH LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the lifetime of storage media is usually less than 5 to 10 years
The antifuse storage technology developed for big data storage cannot meet the needs of massive data storage because of its high cost and low storage density
[0003] In the three-dimensional memory of the prior art, while the storage density is increased and the area of ​​the memory cell is reduced, if the vertical electrode adopts N- / N+ or P- / P+ polysilicon with high resistivity, the resistance will be relatively large, which will lead to different The potential difference of the vertical electrodes between the layers will also lead to a large series resistance of the memory cell, which will affect the normal memory performance

Method used

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  • High-density three-dimensional multilayer memory and preparation method thereof
  • High-density three-dimensional multilayer memory and preparation method thereof
  • High-density three-dimensional multilayer memory and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0089] Present embodiment is the first embodiment of preparation method, comprises the following steps:

[0090] A1. form the basic structure on the bottom circuit 43: the first conductive medium layer and the insulating medium layer of the predetermined number of layers are set in the mode that the first conductive medium layer 41 and the insulating medium layer 42 overlap each other to form the basic structure, see figure 2 , image 3 ;

[0091] A2. Grooving the basic structure: open a curved dividing groove running from the top layer to the bottom layer on the basic structure, so that the dividing groove divides the basic structure into two staggered and mutually separated interdigitated structures, see Figure 4 , Figure 5 ;

[0092] A3. Substrate-specific deposition is performed on the first conductive medium region located on the inner wall of the division groove, and a buffer zone 71 of a low-doped semiconductor material is formed on the surface region of the first...

Embodiment 2

[0101] Present embodiment is the second embodiment of preparation method, comprises the following steps:

[0102] B1. form the basic structure on the bottom circuit 43: the first conductive medium layer and the insulating medium layer of the predetermined number of layers are set in a manner that the first conductive medium layer 41 and the insulating medium layer 42 overlap each other to form the basic structure, see figure 2 , image 3 ;

[0103] B2. Grooving the basic structure: open a curved dividing groove running from the top layer to the bottom layer on the basic structure, so that the dividing groove divides the basic structure into two staggered and mutually separated interdigitated structures, see Figure 4 , Figure 5 ;

[0104] B3. Substrate-specific deposition is performed on the surface area of ​​the first conductive medium located on the inner wall of the division groove to form a buffer zone 71 of low-doped semiconductor material, see Image 6 , Figure 7...

Embodiment 3

[0111] This embodiment is the third embodiment of the preparation method, comprising the following steps:

[0112] C1. form the basic structure body on the bottom circuit 43: the first conductive medium layer and the insulating medium layer of the predetermined number of layers are set in the mode that the first conductive medium layer 41 and the insulating medium layer 42 overlap each other to form the basic structure body, see figure 2 , image 3 ;

[0113] C2. Grooving the basic structure: open a curved dividing groove running from the top layer to the bottom layer on the basic structure, so that the dividing groove divides the basic structure into two staggered and mutually separated interdigitated structures, see Figure 4 , Figure 5 ;

[0114] C3. Fill the insulating medium in the division groove, and then etch the insulating medium to form a memory cell hole, see Figure 24, Figure 25 ;

[0115] C4. Perform specific deposition on the surface area of ​​the first c...

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Abstract

The invention discloses a high-density three-dimensional multilayer memory and a preparation method thereof, and relates to the preparation technology of memories. The memory comprises a bottom layer circuit part and a basic structure body arranged above the bottom layer circuit part, the basic structure body is divided into two independent interdigital structures by a curve-shaped segmentation groove, at least three memory unit holes are formed in the curve-shaped segmentation groove side by side, a vertical electrode is arranged in each memory unit hole, and a storage medium is an insulating medium; a buffer area is arranged on the inner wall of each memory unit hole and in the first conducting medium layer area, the buffer area protrudes from the inner wall of the memory unit hole to the axis of the memory unit hole, and the buffer area is connected with the storage medium. The memory is high in storage density and low in interlayer resistance, and the more stable work of the memory is facilitated.

Description

technical field [0001] The invention relates to the preparation technology of memory. Background technique [0002] Existing technologies include Erasable Programmable Read Only Memory (EPROM), Electrically Erasable Programmable Read Only Memory (EEPROM), Flash Memory, NAND-Flash Memory, Hard Disk, Compact Disk (CD), Digital Versatile Disc (DVD) Various digital storage technologies, including Blu-ray Disc registered by the Blu-ray Disc Association, have been widely used for data storage for more than 50 years. However, the lifetime of storage media is generally less than 5 to 10 years. The antifuse storage technology developed for big data storage cannot meet the needs of massive data storage because of its high cost and low storage density. [0003] In the three-dimensional memory of the prior art, while the storage density is increased and the area of ​​the memory cell is reduced, if the vertical electrode adopts N- / N+ or P- / P+ polysilicon with high resistivity, the resi...

Claims

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Application Information

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IPC IPC(8): H01L27/112H01L21/8246
CPCH10B20/20
Inventor 彭泽忠王苛
Owner CHENGDU PPM TECH LTD