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Copper target material and crystal grain and hardness control method thereof

A technology of hardness control and grain, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of undefined target microhardness and failure to meet the requirements of integrated circuit grain orientation, etc. Achieve the effect of lower preparation cost, ensure stability, and simple process operation

Pending Publication Date: 2021-11-19
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method can make the grain size of the ultra-high-purity copper target ≤10 μm, however, the proportion of grains whose grain orientation is the (110) plane is 30%-50%, which cannot meet the requirements of the 7nm process of integrated circuits for grain orientation. requirements, and the microhardness of the target is not specified

Method used

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  • Copper target material and crystal grain and hardness control method thereof

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Comparison scheme
Effect test

Embodiment 1

[0056] This embodiment provides a method for controlling grain and hardness of a copper target, and the method for controlling grain and hardness includes the following steps:

[0057] (1) The ultra-high-purity copper casting with a purity of 6N is hot-forged at 850°C. The end point of the hot-forging treatment is that the thickness of the copper casting after hot-forging is 45% of the thickness before hot-forging, and then once at 250°C. Heat treatment, followed by cold forging at 20°C. The end point of cold forging is that the thickness of the copper casting after cold forging is 55% of the thickness before cold forging, and then a second heat treatment is carried out at 250°C;

[0058] (2) The copper casting after the step (1) is processed is subjected to a static pressure treatment at 20 ℃, and the static pressure treatment adopts the mode of octagonal static pressure, and the end point of the static pressure treatment is that the thickness of the copper casting after the s...

Embodiment 2

[0061] This embodiment provides a method for controlling grain and hardness of a copper target, and the method for controlling grain and hardness includes the following steps:

[0062] (1) Hot forging the ultra-high-purity copper casting with a purity of 6N at 800°C. The end point of the hot forging treatment is that the thickness of the copper casting after the hot forging treatment is 50% of the thickness before the hot forging treatment, and then conduct it once at 300°C. Heat treatment, followed by cold forging at 30°C. The end point of cold forging is that the thickness of the copper casting after cold forging is 50% of the thickness before cold forging, and then a second heat treatment is carried out at 300°C;

[0063] (2) The copper casting after step (1) is processed at 30 ℃ for a static pressure treatment. 20% of the thickness before static pressure treatment, and then three heat treatments at 300°C.

[0064] (3) The copper casting after step (2) is processed at 30 ℃...

Embodiment 3

[0066] This embodiment provides a method for controlling grain and hardness of a copper target, and the method for controlling grain and hardness includes the following steps:

[0067] (1) Hot forging the ultra-high-purity copper castings with a purity of 6N or more at 900°C. The end point of the hot forging treatment is that the thickness of the copper castings after the hot forging treatment is 40% of the thickness before the hot forging treatment, and then at 200°C. One heat treatment, followed by cold forging at 15°C, the end point of cold forging is that the thickness of the copper casting after cold forging is 60% of the thickness before cold forging, and then a second heat treatment at 200°C;

[0068] (2) The copper casting after the step (1) is processed is carried out a static pressure treatment at 15 ℃, and the static pressure treatment adopts the mode of octagonal static pressure, and the end point of the static pressure treatment is that the thickness of the copper ...

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Abstract

The invention provides a copper target material and a crystal grain and hardness control method thereof. The crystal grain and hardness control method comprises the steps that a copper casting is sequentially subjected to hot forging treatment, primary heat treatment, cold forging treatment, secondary heat treatment, primary static pressure treatment, tertiary heat treatment and secondary static pressure treatment, so that the copper target material is obtained. According to the crystal grain and hardness control method, hot forging and cold forging are combined, particularly primary static pressure treatment and secondary static pressure treatment are improved, multiple heat treatment processes are combined, the crystal grain size and the crystal grain orientation can be effectively controlled, the crystal grain size is smaller than or equal to 10 micrometers under the preferable condition, the crystal grain orientation is that the crystal grain proportion of a (110) face is 50%-70%, the requirements of the 7nm technological process of an integrated circuit on the crystal grain size and the crystal grain orientation are met, and the uniform thickness of a sputtering film is ensured; meanwhile, the microhardness can be effectively controlled to be larger than or equal to 110 HV under the optimal condition, it is guaranteed that deformation is avoided in the using process, and the sputtering stability is guaranteed; and the method is simple to operate, low in preparation cost and wide in applicability.

Description

technical field [0001] The invention belongs to the technical field of target material preparation, and relates to a copper target material and a method for controlling its grain and hardness. Background technique [0002] With the rapid development of ultra-large-scale integrated circuits, semiconductor manufacturing technology has also continued to develop. At present, the size of semiconductor chips has been reduced to the nanometer level. factor. Therefore, it is necessary to select materials with high electromigration resistance and electrical conductivity to reduce the resistance of chip interconnection lines and improve their operation speed. [0003] At present, the traditional aluminum and aluminum alloy interconnection wires can no longer meet the requirements of the VLSI process. Compared with aluminum, copper has better resistance to electromigration and electrical conductivity. Among them, ultra-high-purity copper (Ultra High Purity Copper (UHPC for short) has...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34B21J5/00C22F1/08
CPCC23C14/3414C22F1/08B21J5/002
Inventor 姚力军潘杰边逸军王学泽慕二龙车雨晗
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD