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High-temperature-resistant flexible magnetoelectric sensor and preparation method thereof

A magnetoelectric sensor, high temperature resistant technology, applied in the size/direction of magnetic field, piezoelectric device/electrostrictive device, magnetic field measurement using electromagnetic device, etc. The epoxy resin has poor high temperature resistance and other problems, and achieves the effects of improved interface coupling performance, low production cost and simple structure

Pending Publication Date: 2021-11-19
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In summary, it is not difficult to find that using epoxy resin to bond magnetostrictive materials and piezoelectric materials to prepare magnetoelectric heterojunction materials is a common method for preparing magnetoelectric sensors. However, the high temperature resistance of epoxy resin is poor. Magnetoelectric sensors prepared with epoxy resin as an adhesive are only suitable for use at room temperature
In addition, the Curie temperature of piezoelectric ceramics such as PMN-PT, PZT, and PZN-PT is too low, which is far from satisfying the use of magnetoelectric sensors in high-temperature environments above 350°C.
These have greatly limited the development of magnetoelectric sensors in fields involving high temperature such as geomagnetic detection and national defense security.
In addition, the magnetoelectric electric field coefficient of the flexible magnetoelectric sensor prepared so far is low, and there is no flexible magnetoelectric sensor on the market that can match the performance of the rigid magnetoelectric sensor.

Method used

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  • High-temperature-resistant flexible magnetoelectric sensor and preparation method thereof
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  • High-temperature-resistant flexible magnetoelectric sensor and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0033] This embodiment is a high temperature resistant flexible magnetoelectric sensor.

[0034] 1. The preparation steps of the magnetoelectric composite structure of the high temperature resistant flexible magnetoelectric sensor are as follows:

[0035] (1) BiScO with a length of 10 mm and a width of 2 mm was treated with paraffin wax 3 -PbTiO 3 The piezoelectric ceramics are fixed on the polished glass substrate, and then the thickness of the piezoelectric ceramics is reduced to 0.15 mm by mechanical thinning and polishing, and the magnetostrictive material layer Terfenol- The thickness of the D single crystal is reduced to 0.35mm, and the surface roughness of both is 10nm;

[0036] (2) After mechanical thinning, the BiScO 3 -PbTiO 3 Metal Ag electrodes are prepared on one side of piezoelectric ceramics;

[0037] (3) On the dry oil-free filter paper, the magnetostrictive material layer Terfenol-D single crystal and the piezoelectric material layer BiScO 3 -PbTiO 3 Hi...

Embodiment 2

[0048] This embodiment is a high temperature resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as those in Example 1, except that the surface roughness in step (1) of this example is 100 nanometers.

[0049] The piezoelectric material piezoelectric constant d of the magnetoelectric sensor that present embodiment obtains 31 , Magnetoelectric field coefficient α under quasi-static ME , Magnetoelectric field coefficient α under quasi-static state after bending ME , Magnetoelectric electric field coefficient α in the resonance state ME As shown in Table 1, Example 2.

Embodiment 3

[0051] This embodiment is a high temperature resistant flexible magnetoelectric sensor. The preparation steps of the magnetoelectric composite structure of the high-temperature-resistant flexible magnetoelectric sensor are the same as in Example 1, except that: in the step (5) of this embodiment, 3.5 kilograms of non-magnetic flat copper blocks are used to apply the magnetoelectric composite structure to the magnetoelectric composite structure. prestressed.

[0052] The piezoelectric material piezoelectric constant d of the magnetoelectric sensor that present embodiment obtains 31 , Magnetoelectric field coefficient α under quasi-static ME , Magnetoelectric field coefficient α under quasi-static state after bending ME , Magnetoelectric electric field coefficient α in the resonance state ME As shown in Table 1 Example 3.

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Abstract

The invention relates to a high-temperature-resistant flexible magnetoelectric sensor and a preparation method thereof. The high-temperature-resistant flexible magnetoelectric sensor comprises a magnetostrictive material layer and a piezoelectric material layer, the magnetostrictive material layer is a Terfenol-D single crystal sheet, and the piezoelectric material layer is a BiScO3-PbTiO3 piezoelectric ceramic sheet. And the magnetostriction material layer and the piezoelectric material layer are bonded by using high-temperature elargol, so that the high-temperature-resistant flexible magnetoelectric sensor is obtained. The magnetoelectric sensor prepared by the invention has the outstanding comprehensive performance advantages of high sensitivity, miniaturization, flexibility, high-temperature work, low power consumption and low cost, and has wide application prospects in the fields related to high temperature, such as national defense safety, intelligent transportation, advanced manufacturing and the like.

Description

technical field [0001] The invention relates to the technical field of multiferroic magnetoelectric materials, in particular to a high temperature resistant flexible magnetoelectric sensor and a preparation method thereof. Background technique [0002] Multiferroic magnetoelectric materials have broad application prospects in high-tech fields such as data storage, transducers, and magnetoelectric sensors. Among them, the magnetoelectric sensor, as an emerging sensitive electronic component, has the advantages of higher room temperature sensitivity and stability, lower manufacturing cost, smaller size, green environmental protection and zero power consumption compared with traditional magnetic sensor sensitive electronic components. , Therefore, the magnetoelectric sensor is considered to be one of the most promising magnetic field sensors. However, with the development of science and technology, the requirements for magnetoelectric sensors in fields such as national defense...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/10G01R33/00G01R33/06H01L41/08H01L41/22H10N30/00H10N30/01
CPCG01R33/10G01R33/06G01R33/0052H10N30/01H10N30/101
Inventor 曹博汪尧进袁国亮
Owner NANJING UNIV OF SCI & TECH