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A kind of nanometer bismuth oxide anti-radiation ceramic coating, preparation method and application

A technology of nano-bismuth oxide and ceramic coating, which is applied in the field of anti-radiation materials, can solve problems such as difficult coating, and achieve the effects of prolonging service life, improving radiation protection performance, and improving reliability

Active Publication Date: 2022-07-12
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the limitations of the material properties of the bismuth oxide material itself, it is difficult to coat it, especially it is difficult to form a uniform, dense, and strong coating with adjustable thickness at low temperature, which is used in microelectronic devices and optoelectronic integrated devices. Radiation protection in harsh environments, to achieve the purpose of radiation resistance reinforcement, while not changing the original shape and other comprehensive properties of microelectronic devices and optoelectronic integrated devices

Method used

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  • A kind of nanometer bismuth oxide anti-radiation ceramic coating, preparation method and application
  • A kind of nanometer bismuth oxide anti-radiation ceramic coating, preparation method and application
  • A kind of nanometer bismuth oxide anti-radiation ceramic coating, preparation method and application

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Embodiment

[0040] see Figure 1-Figure 4 , the nano-bismuth oxide anti-radiation ceramic coating provided by the embodiment of the present invention, the ceramic coating is the slurry of the characteristic coating prepared by the following components by mass percentage, and then cured:

[0041]

[0042]

[0043] The slurry of the characteristic coating forms a ceramic coating after curing on the surface of the shell substrate of electronic components (especially microelectronic integrated devices, optoelectronic integrated devices), and the content of bismuth oxide in the ceramic coating can be up to 80wt%.

[0044] The nanometer bismuth oxide of the characteristic coating is nanocrystalline particles with a particle size of ≤500 nm.

[0045] The silane is one or more of ethyl orthosilicate, methyl trimethoxy silane, propyl trimethoxy silane, ethyl trimethoxy silane and epoxy silane.

[0046] The acid is one or more of formic acid, acetic acid and citric acid.

[0047] The solven...

specific Embodiment 1

[0059] The nano-bismuth oxide anti-radiation ceramic coating, preparation method and application provided by the embodiments of the present invention are based on the foregoing embodiments, and the following specific selections are made:

[0060] Its ceramic coating is a slurry of characteristic coatings prepared from the following components by mass percentage, and then cured:

[0061]

[0062]

[0063] The content of bismuth oxide in the ceramic coating is greater than or equal to 80wt%.

[0064] A method for preparing the nanometer bismuth oxide anti-radiation ceramic coating, which comprises the steps:

[0065] S1: Coating Preparation

[0066] According to the ratio set above, the components for preparing the characteristic paint are ball-milled at room temperature for 4 hours at a speed of 250 rmp, mixed uniformly to obtain a slurry, and then the slurry is aged at 60 ° C for 0.5 h to obtain the characteristic paint;

[0067] S2: Coating Preparation

[0068] S2.1 ...

specific Embodiment 2

[0070] The nanometer bismuth oxide anti-radiation ceramic coating, preparation method and application provided in the embodiment of the present invention are basically the same as those in embodiment 1, and the differences are:

[0071] Its ceramic coating is a slurry of characteristic coatings prepared from the following components by mass percentage, and then cured:

[0072]

[0073]

[0074] A method for preparing the nanometer bismuth oxide anti-radiation ceramic coating, which comprises the steps:

[0075] S1: Coating Preparation

[0076] According to the proportions set above, the components of the prepared characteristic paint are ball-milled at room temperature for 4 hours at a speed of 250 rmp, mixed uniformly to obtain a slurry, and then the slurry is aged at 80 °C for 1 hour to obtain the characteristic paint;

[0077] S2: Coating Preparation

[0078] S2.1 After degreasing and dehydrating the surface of the base material of the electronic component casing, u...

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Abstract

The invention discloses a nano-bismuth oxide radiation-resistant ceramic coating, a preparation method and an application. The ceramic coating is formed by curing the slurry of a characteristic coating prepared by the following components by mass percentage: nano-bismuth oxide 10~ 25%; silane 20-30%; acid 2-5%; solvent 45-60%; auxiliary agent 1-5%; The content can reach up to 80wt%. The invention also discloses a preparation method of the ceramic coating. The characteristic coating is first prepared, coated on the surface of the base material of the tube shell, the characteristic coating is prepared, and the ceramic coating is obtained after curing. The invention also discloses the application of the ceramic coating, which is used to improve the anti-radiation performance of the base of electronic components, and can effectively reduce the damage of the base of electronic components by high-energy radiation such as γ or X-rays.

Description

technical field [0001] The invention relates to the technical field of anti-radiation materials, in particular to a nanometer bismuth oxide anti-radiation ceramic coating, a preparation method and an application. Background technique [0002] With the development of aerospace technology and nuclear technology, the accompanying radiation safety issue is receiving more and more attention. Protection research is increasingly important. In the space environment, cosmic radiation is inevitable, and cosmic radiation will cause damage to microelectronic devices such as CPU and optoelectronic integrated devices. The radiation effects of digital and analog integrated circuits in microelectronic devices are generally divided into total dose effects (TID), single event effects (SEE) and dose rate (Dose Rate) effects. Total dose effects arise from oxide charge trapping or displacement disruption induced by gamma photon, proton, and neutron irradiation, including increased leakage curr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09D1/00C09D7/63G21F1/10G21F1/06G21F1/12B82Y30/00B82Y40/00
CPCC09D1/00C09D7/63G21F1/103G21F1/06G21F1/12B82Y30/00B82Y40/00Y02E30/30
Inventor 甄强沈孙毅布乃敬陈来李榕
Owner SHANGHAI UNIV
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