Tray with air bridge structure and epitaxial growth method

Abstract

The invention discloses a tray with an air bridge structure and an epitaxial growth method. The tray comprises a tray main body, the end face of the tray main body is provided with a plurality of grooves, a plurality of composite steps are distributed in each groove, and after a substrate is placed, the air bridge structure is naturally formed between the edge of the substrate and the inner walls of the grooves. Benefited from the fluid transport strengthening effect of the air bridge structure, the back surface of an epitaxial wafer grown by the technical scheme does not have a decomposition phenomenon, the circulation of reaction fluid on the back surface of the epitaxial wafer is further strengthened by virtue of the air bridge formed by the first step and a spray hole structure at the bottom of the grooves, and the deep height of the second step is matched so that the back fluid flowing space is enlarged, so that the heat exchange is more uniform, and the temperature consistency of the substrate is better. The design of the tray is particularly suitable for homoepitaxy, and the wavelength uniformity of the homogeneous LED epitaxial wafer growing on the tray is remarkably improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a tray for epitaxial growth, which is suitable for the homogeneous epitaxy process of semiconductor substrates such as GaN single crystal, AlN single crystal and SiC single crystal. Background technique [0002] With the rapid development of third-generation semiconductor materials and devices represented by GaN and SiC, the demand for high-quality epitaxial materials is becoming more and more urgent. For example, homoepitaxy on a GaN single crystal substrate, the material has ultra-high crystal quality, and the dislocation density of the material is 2 to 3 orders of magnitude smaller than that of the traditional heterogeneous epitaxy. For high-performance GaN devices (such as lasers, Micro -LED, etc.) are extremely important. However, the graphite trays currently used for homoepitaxial growth are all based on heterogeneous substrates such as sapphire. Using this...

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Problems solved by technology

[0003] The technical problem solved by the invention is: the uniformity of the homogeneous epitaxial wafer grown on the existing tray is poor, and the back of the epitaxial growth semiconductor substrate is easily baked black.

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