Manufacturing method of wafer

Abstract

The invention provides a manufacturing method of a wafer. The manufacturing method comprises the following steps of: forming a stripping layer along a C surface at a depth position equivalent to the thickness of the wafer from a first surface in a crystal ingot by virtue of laser irradiation; adhering the first surface of the crystal ingot to a solid substrate through an adhesive layer; applying an external force to the solid substrate and / or the crystal ingot at one end, far away from the first surface, of the stripping layer, so that the crystal ingots at two ends of the stripping layer generate relative motion, and a part of the crystal ingot is stripped by taking the stripping layer as an interface to generate the wafer; and reducing the cohesiveness of the adhesive layer, and separating the generated wafer from the solid substrate. According to the manufacturing method, the stripping process of the crystal ingot is simple and reliable, the production cost is reduced, and the production efficiency is improved.

Description

technical field [0001] The present application belongs to the technical field of semiconductor element manufacturing, and more specifically, relates to a wafer manufacturing method. Background technique [0002] In the semiconductor industry, wafers of materials such as silicon carbide (SiC), silicon (Si), sapphire (Al2O3), glass, etc. are usually used as substrates for preparing devices. The traditional wafer preparation method is to peel the ingot into pieces using wire saw cutting or "cold separation". [0003] However, there is serious material loss in the way of wire saw cutting, and the slicing process will cause most (70-80%) of the crystal ingot to be discarded. Especially for high-hardness SiC materials (Mohs hardness 9.5), the wire sawing method not only consumes a lot of material, but also has many problems such as low efficiency, serious tool wear and environmental pollution, which seriously restricts the development of the SiC industry. [0004] In the "cold s...

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Problems solved by technology

The spin-coating process of glue increases the complexity of the process, which is not conducive to mass production

In addition, liquid nitrogen refrigeration is used in the above separation scheme, and liquid nitrogen as a consumable will increase additional production costs

At the same time, the introduction of refrigeration devices will also make the equipment manufacturing process more complicated

The above problems limit the application of this scheme in industrial production

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