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Thin film deposition method and thin film deposition equipment

A thin film deposition and equipment technology, applied in the field of thin film deposition methods and equipment, can solve the problems affecting the electrical properties and other physical properties of the phase change material film, the quality of the phase change material film is not high, and the performance of the phase change memory, so as to promote Effects of target sputtering reaction, concentration reduction, and performance improvement

Pending Publication Date: 2021-11-30
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0004] In the related art, the quality of the phase change material film deposited by magnetron sputtering is not high, which affects the electrical properties and other physical properties of the phase change material film, and then affects the performance of the phase change memory.

Method used

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  • Thin film deposition method and thin film deposition equipment
  • Thin film deposition method and thin film deposition equipment
  • Thin film deposition method and thin film deposition equipment

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Embodiment Construction

[0044] The technical solutions of the present disclosure will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0045] In the embodiments of the present disclosure, terms such as "first" and "second" are used to distinguish similar objects, and are not used to describe a specific sequence or sequence.

[0046] In the embodiments of the present disclosure, the term "A is in contact with B" includes a situation where A is in direct contact with B, or a situation where A is indirectly in contact with B with other components interposed between A and B.

[0047] In embodiments of the present disclosure, the term "layer" refers to a portion of material comprising a region having a thickness. A layer may extend over the entirety of the underlying or overlying structure, or may have an extent that is less than the extent of the underlying or overlying structure. Furthermore, a layer may be a region of homogeneous or heterog...

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Abstract

An embodiment of the invention discloses a thin film deposition method and thin film deposition equipment. The thin film deposition method comprises the steps of introducing inert gas with the atomic weight larger than that of argon into a reaction chamber; in the process of introducing the inert gas into the reaction chamber, applying ionization voltage between a target material and a substrate in the reaction chamber, and ionizing the inert gas to generate inert gas ions to bombard the target material; when the gas pressure in the reaction chamber reaches a preset value, stopping introduction of the inert gas; and applying a magnetic field to the reaction chamber, so that charged particles in plasmas generated by ionization of the target material bombard the target material under the action of the magnetic field, and composition particles of the target material are deposited on the substrate.

Description

technical field [0001] Embodiments of the present disclosure relate to the technical field of semiconductors, and in particular to a thin film deposition method and equipment. Background technique [0002] Phase change memory (PCRAM) is a new type of memory technology that has emerged in recent years. It uses phase change thin film materials to achieve reversible phase transitions between crystalline and amorphous states under the action of photoelectric pulses to achieve data storage. Because it not only meets the various requirements of the non-volatile memory, but also has a relatively simple manufacturing process, it has attracted widespread attention. Phase-change memory films are generally grown by physical vapor deposition (PVD) or chemical vapor deposition (CVD), among which physical vapor deposition is more widely used because of its excellent film properties. [0003] Physical vapor deposition technology is to use physical methods to vaporize the surface of the ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
CPCC23C14/35C23C14/345
Inventor 骆金龙
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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