Infrared detector pixel and infrared detector based on CMOS process

Abstract

The invention relates to an infrared detector pixel and an infrared detector based on a CMOS process, the pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure located on the CMOS measurement circuit system, and the CMOS measurement circuit system and the CMOS infrared sensing structure are prepared by adopting the CMOS process; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures which are located on the CMOS measurement circuit system, the columnar structures are located between the reflecting layer and the infrared conversion structure, the reflecting layer comprises a reflecting plate and a supporting base, and the infrared conversion structure is electrically connected with the CMOS measurement circuit system through the columnar structures and the supporting base; the columnar structures adopt a hollow column, and the side wall of the hollow column is formed by combining metal and a medium. According to the technical scheme, the problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved; and the columnar structures adopt the hollow column so that the heat conduction is smaller, the influence of heat radiation generated by the columnar structure on an electric signal of the infrared conversion structure is reduced, and the detection performance is favorably improved.

Description

Technical field [0001] The present disclosure relates to the field of infrared detection, and more particularly to an infrared detector cell and an infrared detector based on a CMOS process. Background technique [0002] Monitor the market, car assistance market, home market, intelligent manufacturing market, and mobile applications have strong demand for non-refrigerated high-performance chips, and the performance of chip performance, consistency, and product price have certain The requirements are expected to have a potential demand for hundreds of millions of chips per year, and the current process programs and architectures cannot meet market demand. [0003] At present, the infrared detector uses the combination of measuring circuits and infrared sensing structures, and the measuring circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, complementary metal oxide semiconductor) process, and the infrared sensing structure uses MEMS (Micro-Electro -Mechanical sy...

AI Technical Summary

Problems solved by technology

[0011] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an infrared detector pixel and an infrared detector based on a CMOS process, which solves the problem of low performance and low pixel scale of traditional MEMS process infrared detectors. Problems such as low yield rate, while improving probing performance

Images