Thin film transistor array substrate and manufacturing method thereof
A technology for thin film transistors and array substrates, applied in the field of thin film transistor array substrates and their fabrication, can solve the problems of shortening, unfavorable thin film transistor device size, shortening channel length, etc., achieve regulation or suppression of shortening, and ensure effective channel Length, device size reduction effect
Pending Publication Date: 2021-12-03
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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Problems solved by technology
[0004] The present invention provides a thin film transistor and its manufacturing method to solve the problem of low resistance regions at both ends of the channel due to the diffusion of the conductive effect on both sides of the channel of traditional film transistors, resulting in shortening of the effective channel length, which is not conducive to thin film transistors. Technical issues of device size reduction
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[0022] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [top], [bottom], [front], [back], [left], [right], [inside], [outside], [side], etc., are only for reference The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In the figures, structurally similar elements are denoted by the same reference numerals. In the drawings, the thicknesses of some layers and regions are exaggerated for clear understanding and ease of description. That is, the size and thickness of each component shown in the drawings are arbitrarily shown, but the present invention is not limited thereto.
[0023] An embodiment of the present application provides a thin film transistor, which can be arrang...
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The invention discloses a thin film transistor array substrate and a manufacturing method thereof. The thin film transistor array substrate comprises a substrate and a platform layer arranged on the substrate. The oxide active layer includes a channel portion and two conductor portions. The horizontal plane where the top surface of the channel part is located is higher than the horizontal plane where the top surface of any conductor part is located. A grid insulating layer is arranged on the oxide active layer, the grid is arranged on the grid insulating layer, and the orthographic projection of the grid on the substrate covers the orthographic projection of the platform layer and the orthographic projection of the channel part on the substrate. A source and a drain are electrically connected to a conductor portion. According to the thin film transistor array substrate, the conductor diffusion path of the oxide active layer is prolonged, the effective channel length is ensured, and the size of a thin film transistor device can be reduced.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor array substrate and a manufacturing method thereof. Background technique [0002] With the development of display technology, flat panel displays have become the current mainstream displays. Commonly used flat panel displays include liquid crystal displays (Liquid Crystal Display, LCD) and active matrix driven organic electroluminescent displays (Active Matrix OLED, AMOLED). [0003] In a flat panel display, a thin-film transistor (Thin-Film Transistor, TFT) array substrate is a main driving element, and is a necessary structure of a high-performance flat panel display device. The thin film transistor array substrate includes a plurality of thin film transistors arranged in an array, including different types of bottom gate thin film transistors or top gate thin film transistors. The top-gate thin film transistor has lower parasitic capacitance and bette...
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IPC IPC(8): H01L29/786H01L21/34
CPCH01L29/7869H01L29/78696H01L29/66969H01L29/78621H01L29/78603H01L29/78618H01L29/42384H01L29/66742
Inventor 卓毅
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD