Vertical structure LED chip and manufacturing method thereof

Abstract

The invention discloses a vertical structure LED chip and a manufacturing method thereof. The vertical structure LED chip comprises a first substrate, a bonding layer, a reflector layer, a first ohmic contact layer and an epitaxial layer, a plurality of through holes, a transparent conducting layer and a metal nanowire layer, wherein the bonding layer, the reflector layer, the first ohmic contact layer and the epitaxial layerare located on the first surface of the first substrate and are sequentially stacked from bottom to top, the epitaxial layer comprises a second semiconductor layer, a light emitting layer, a first semiconductor layer and an intrinsic semiconductor layer which are located on the surface of the first ohmic contact layer and are sequentially stacked from bottom to top, the through holes penetrate through the intrinsic semiconductor layer and extend out of the surface of the first semiconductor layer, and the transparent conducting layer and the metal nanowire layer are located on the surface of the intrinsic semiconductor layer and the bottoms of the side walls of the through holes. According to the vertical structure LED chip and the manufacturing method thereof of the invention, the surface of the intrinsic semiconductor layer and the side walls and bottoms of the plurality of through holes are provided with the transparent conducting layer and the metal nanowire layer with the resistivity lower than that of the intrinsic semiconductor layer, so that the uniformity of current injection is improved, and a better current expansion effect is obtained.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and more specifically relates to a vertical structure LED chip and a manufacturing method thereof. Background technique [0002] The vertical structure LED chip has the advantage of high brightness compared with the horizontal structure LED chip. On the one hand, the vertical structure LED chip transfers the epitaxial layer from the sapphire substrate with poor insulation and heat dissipation to the bonding substrate with excellent electrical and thermal conductivity, which can withstand higher operating current and obtain higher brightness. On the other hand, the vertical structure LED chip is easier to micro-nano process the light-emitting surface, thereby reducing the total reflection of the epitaxial layer and the air interface to increase the light extraction efficiency. At present, vertical structure LED chips mainly include vertical reverse polarity (N electrode upward) stru...

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Problems solved by technology

However, LED chips with a vertical positive polarity structure need to use the same-side metal layer scheme, which requires the design and preparation of a complex metal-dielectric-metal stacked layer scheme, and because there must be stress between the metal and the dielectric, during the manufacturing process Especially in the process of bonding and substrate transfer, stress regulation will face greater technical challenges, that is, the manufacturing process of LED chips with vertical positive polarity structure is complicated

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