Light emitting diode chip and method for manufacturing same

Abstract

The invention discloses a light emitting diode chip and making method thereof, wherein, the chip comprises an external spreading wafer which is formed on a sapphire substrate, an N type zone and a P type zone of the external spreading wafer are covered with a metal electrode layer which comprises a transparent metal layer and a reflection layer and has a metal layer under convex points and metal convex points; a soleplate for flip chip which is provided with a metal line layer and convex points formed on the metal line layer; wherein, the N type zone surrounds the P type zone as large as possible, and the N type zone is communicated with the metal electrode layer covered on the N type zone and P type zone is divided into a plurality of zones by the N type zone and the metal electrode layer. The metal convex points of the P type zone are evenly distributed on a plurality of divided zones. The invention improves the current distribution conditions by optimized design for device electrode so as to improve the performance and life-span of devices. In addition, the flip chip joint point strength on the electrode and thermal conductivity performance of the device are further improved.

Description

Technical field [0001] The invention relates to a structure design of a light emitting diode (LED) chip and a manufacturing method thereof, in particular to a structure design of a light emitting diode chip with a high-power flip-chip structure and a manufacturing method thereof. Background technique [0002] The electrode metal surface of the traditional light-emitting diode LED die is placed and fixed on a bottom plate. Using wire-bonding technology, the gold wire is welded on the electrode metal layer of the die and connected to the bottom plate. In order to improve current distribution and device performance, on the traditional light-emitting diode die, the positive and negative electrode metal layers cover the entire device, and wire-bonding pads are prepared on this electrode layer for gold wire bonding. Since the light emitting layer of the light emitting diode is below the electrode metal layer, part of the emitted light is absorbed by the electrode metal layer, and this...

AI Technical Summary

Problems solved by technology

Although the manufacturing process of the metal electrode layer on the gallium nitride epitaxial wafer has been widely used in silicon integrated circuit technology, for high-power LEDs, due to the large input current, the device requires a uniform distribution of current on the metal electrode layer. Therefore, there are still the following defects at present: First, the structure and design of the existing metal electrode layer cannot provide good current and voltage performance for high-power flip-chip LED devices, resulting in large contact resistance of the metal electrode layer of the device , the working voltage is too high

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