Processing method of base material with aluminum nitride film layer and preparation method of filter
A processing method, technology of aluminum nitride film, applied in chemical instruments and methods, cleaning method using liquid, manufacture/assembly of piezoelectric/electrostrictive devices, etc., capable of solving problems such as abnormal appearance of aluminum nitride film layer , to achieve the effect of improving product yield and product performance, improving surface cleanliness and flatness, and improving film quality
Pending Publication Date: 2021-12-07
SEMICON MFG ELECTRONICS (SHAOXING) CORP
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[0003] The object of the present invention is to provide a method for processing a substrate with an aluminum nitride film layer, so as to solve the problem that the existing aluminum nitride film layer is prone to abnormal appearance during its processing
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[0016] According to the background, it is currently in the semiconductor processing containing the aluminum nitride film layer, and the appearance of the current film layer and the subsequent membrane layer can be easily appeared, which in turn affects the electrical properties and reliability of the product. The inventors of the present invention have been fully studied by the processing process of the aluminum nitride film layer, and it is found that an important reason that the appearance of the current film layer and the subsequent membrane layer is to be performed on the substrate containing the aluminum nitride film layer. When the wet process, the surface of the aluminum nitride is prone to solid impurities.
[0017] Specific reference figure 1 As shown, a wet process performed by the substrate is, for example,: a chemical reagent is cleaned, and then purified by pure water to remove a chemical reagent on the surface of the substrate, then the substrate is dried. The invent...
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The invention provides a processing method of a base material with an aluminum nitride film layer and a preparation method of a filter. The method comprises the following steps: carrying out acid pickling after wet process is carried out, and carrying out dehydration treatment by utilizing a hydrophilic organic solvent after acid pickling to remove moisture on the aluminum nitride film layer, so solid impurities caused by chemical reaction of aluminum nitride and water are avoided, the surface cleanliness and flatness of the aluminum nitride film layer are improved, and the quality of a film subsequently formed on the aluminum nitride film layer is improved.
Description
Technical field [0001] The present invention relates to the semiconductor technology, and Background technique [0002] Aluminum nitride (AlN) is a common processing material in the semiconductor field, for example it can be applied to a filter layer, or can also be applied to a light-emitting diode and as a bottom liner. However, in response to the device processing containing the aluminum nitride film, there is often a presence of the current aluminum nitride layer prepared, and the film layer abnormality in the subsequent process, and it is also easy to initiate the electrical test of the product. Abnormal and deterioration of reliability. Inventive content [0003] It is an object of the present invention to provide a method of processing a substrate having a layer of aluminum nitride film to solve the problem that the existing aluminum nitride film layer is prone to appearance abnormal appearance during its processing. [0004] In order to solve the above technical problems...
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IPC IPC(8): H01L41/22B08B3/08H03H3/02H10N30/01
CPCB08B3/08H03H3/02H03H2003/023H10N30/01
Inventor 邹斌蔡丹华史爽
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP