Nitride semiconductor device and method for manufacturing same
A nitride semiconductor and semiconductor technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of gate threshold variation, large influence, and inability to easily extract holes
Pending Publication Date: 2021-12-17
ROHM CO LTD
View PDF1 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Therefore, in the nitride semiconductor HEMT described in Patent Document 1, when holes are injected into the p-type GaN gate layer, holes cannot be easily extracted, and there is a possibility that the gate threshold value may fluctuate.
It should be noted that this tendency has a greater influence in the case of forming a Schottky barrier junction between the gate and the pGaN gate layer
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0066] figure 1 It is a partial plan view for explaining the configuration of the nitride semiconductor device according to the first embodiment of the present invention. figure 2 along figure 1 An enlarged sectional view of line II-II. image 3 along figure 1 Enlarged sectional view of line III-III.
[0067] For illustrative purposes, figure 1 omitted in figure 2 and image 3 The passivation film shown in symbol 16. Also, for the sake of illustration, figure 1 lieutenant general figure 2 The source main electrode part 3A indicated by the reference numeral 3A is indicated by a solid line, and is omitted. figure 2 The extended part 3B shown in the symbol 3B. in, figure 1 In the figure, the outline of the extension portion 3B is indicated by a dashed-two dotted line.
[0068] Also, for illustrative purposes, the following sometimes uses figure 1 , figure 2 and image 3 The +X direction, -X direction, +Y direction and -Y direction shown in . The +X direction ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
This nitride semiconductor device 1 comprises: a first nitride semiconductor layer 13 that constitutes an electron transit layer; a second nitride semiconductor layer 14 that is formed on the first nitride semiconductor layer and constitutes an electron supply layer; a semiconductor gate layer 15 that is disposed on the second nitride semiconductor layer, has a ridge part 15A on at least a portion thereof, and contains acceptor impurities; a gate electrode 4 that is formed on at least the ridge part of the semiconductor gate layer; a source electrode 3 and a drain electrode 5 that are disposed on the second nitride semiconductor layer; and a hole extraction electrode 6 that is formed on the semiconductor to extract holes in the semiconductor gate layer, and electrically connected to the source electrode.
Description
technical field [0001] The present invention relates to a nitride semiconductor device composed of a Group III nitride semiconductor (hereinafter, sometimes simply referred to as "nitride semiconductor") and a method for manufacturing the same. Background technique [0002] A group III nitride semiconductor is a semiconductor using nitrogen as a group V element among group III-V semiconductors. Representative examples are aluminum nitride (AlN), gallium nitride (GaN), and indium nitride (InN). Generally can be expressed as Al x In y Ga 1-x-y N (0≦x≦1, 0≦y≦1, 0≦x+y≦1). [0003] A HEMT (High Electron Mobility Transistor, High Electron Mobility Transistor) using such a nitride semiconductor has been proposed. Such a HEMT includes, for example, an electron transport layer made of GaN and an electron supply layer made of AlGaN epitaxially grown on the electron transport layer. A pair of source and drain electrodes are formed in contact with the electron supply layer, and a ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/812H01L21/337H01L21/338H01L29/778H01L29/808
CPCH01L29/1066H01L29/2003H01L29/402H01L29/7786H01L29/4238H01L29/66462H01L29/41758H01L29/42364H01L29/66643H01L29/778H01L29/7839
Inventor 大岳浩隆
Owner ROHM CO LTD