Semiconductor device and forming method thereof
A technology of semiconductors and devices, which is applied in the field of semiconductor devices and their formation, and can solve problems such as the quality of semiconductor devices needs to be further improved, interconnection metal layers and metal gates are short-circuited, etc.
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no. 1 example
[0049] Figure 8 to Figure 18 is a schematic cross-sectional structure diagram of the formation process of a semiconductor device according to the first embodiment of the present invention.
[0050] Please refer to Figure 8 , providing a substrate 200 .
[0051] In this embodiment, the base 200 includes a substrate 210 and a plurality of fins 220 on the substrate 210 that are separated from each other.
[0052] In this embodiment, the material of the substrate 210 is single crystal silicon. In other embodiments, the substrate 210 may also be polysilicon or amorphous silicon. The material of the substrate 210 may also be germanium, silicon germanium, gallium arsenide, silicon on insulator (SOI), germanium on insulator (GOI) and other semiconductor materials.
[0053] In this embodiment, the method for forming the substrate 210 and the fins 220 includes: providing an initial substrate (not shown); forming a patterned layer on the initial substrate; The initial substrate is...
no. 2 example
[0099] The difference between this embodiment and the first embodiment is only that a hard mask layer is formed on the top surface of the gate structure before forming the sacrificial layer.
[0100] The process from providing the substrate to forming the gate structure is the same as in the first embodiment, please refer to Figure 8 to Figure 11 .
[0101] Please refer to Figure 19 , forming a hard mask layer 202 on the gate structure 230 , and forming a sacrificial layer 240 on the hard mask layer 202 .
[0102] The purpose of forming the hard mask layer 202 on the gate structure 230 is to prevent short circuit between the gate structure 230 and the source-drain doped layer (not shown in the figure), and to play the role of electrical isolation.
[0103] After forming the sacrificial layer 240 on the hard mask layer 202, please refer to Figure 13 to Figure 18 .
[0104] Correspondingly, the present invention also provides a semiconductor device, including: a base 200,...
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Abstract
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