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Preparation method and application of high-density HATN@MXene flexible self-supporting film electrode

A self-supporting film and film electrode technology, applied in electrode manufacturing, active material electrodes, hybrid capacitor electrodes, etc., to achieve the effects of high tap density, good flexibility and simple operation

Active Publication Date: 2021-12-24
JIANGSU UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the research on the combination of HATN and MXene to construct flexible self-supporting thin film electrodes has not been reported yet.

Method used

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  • Preparation method and application of high-density HATN@MXene flexible self-supporting film electrode
  • Preparation method and application of high-density HATN@MXene flexible self-supporting film electrode
  • Preparation method and application of high-density HATN@MXene flexible self-supporting film electrode

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Embodiment 1

[0030] The invention is a method for preparing a high-density HATN@MXene flexible self-supporting thin film electrode, which specifically includes the following steps:

[0031] Step 1: Preparation of nanorod-shaped HATN: HATN is obtained by dehydration condensation. Take 0.6g of hexaketonecyclohexane, and dissolve it in 50ml of acetic acid under uniform stirring; then add 0.75g of o-phenylenediamine to it, and heat the resulting solution under reflux at 120°C for 10h; after the reaction is completed, put The suspension was vacuum-filtered and washed several times with hot acetic acid, acetone, methanol, ethanol and water respectively; finally, vacuum-dried at 50°C to obtain HATN powder.

[0032] Step 2: Preparation of MXene nanosheet dispersion: slowly dissolve 1.8g of lithium fluoride in 25ml of hydrochloric acid with a concentration of 9M, stir for 10 minutes, and slowly add 2g of Ti 3 AlC 2 , stirred at 35°C for 20 hours to obtain a fully reacted mixed solution; then wash...

Embodiment 2

[0037] The preparation method of the present invention comprises the steps:

[0038] Step 1: Preparation of nanorod-shaped HATN: HATN is obtained by dehydration condensation. Take 0.6g of hexaketonecyclohexane, and dissolve it in 50ml of acetic acid under uniform stirring; then add 0.75g of o-phenylenediamine to it, and heat the resulting solution under reflux at 120°C for 10h; after the reaction is completed, put The suspension was vacuum-filtered and washed several times with hot acetic acid, acetone, methanol, ethanol and water respectively; finally, vacuum-dried at 50°C to obtain HATN powder.

[0039] Step 2: Preparation of MXene nanosheet dispersion: slowly dissolve 1.8g of lithium fluoride in 25ml of hydrochloric acid with a concentration of 9M, stir for 10 minutes, and slowly add 2g of Ti 3 AlC 2 , stirred at 35°C for 20 hours to obtain a fully reacted mixed solution; then washed and centrifuged with deionized water at a speed of 3600 rpm, centrifuged for 7 minutes ea...

Embodiment 3

[0042] The preparation method of the present invention comprises the steps:

[0043] Step 1: Preparation of nanorod-shaped HATN: HATN is obtained by dehydration condensation. Take 0.6g of hexaketonecyclohexane, and dissolve it in 50ml of acetic acid under uniform stirring; then add 0.75g of o-phenylenediamine to it, and heat the resulting solution under reflux at 120°C for 10h; after the reaction is completed, put The suspension was vacuum-filtered and washed several times with hot acetic acid, acetone, methanol, ethanol and water respectively; finally, vacuum-dried at 50°C to obtain HATN powder.

[0044] Step 2: Preparation of MXene nanosheet dispersion: slowly dissolve 1.8g of lithium fluoride in 25ml of hydrochloric acid with a concentration of 9M, stir for 10 minutes, and slowly add 2g of Ti 3 AlC 2 , stirred at 35°C for 20 hours to obtain a fully reacted mixed solution; then washed and centrifuged with deionized water at a speed of 3600 rpm, centrifuged for 7 minutes ea...

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Abstract

The invention relates to a preparation method and application of a high-density HATN@MXene flexible self-supporting thin film electrode. The preparation method comprises the following steps of preparing nanorod-shaped HATN through dehydration condensation; preparing MXene nanosheet dispersion liquid; then, adding the nanorod-shaped HATN into the MXene nanosheet dispersion liquid, and obtaining a mixed dispersion solution under the ultrasonic action; and finally, carrying out vacuum suction filtration to obtain the high-density HATN@MXene flexible self-supporting film electrode. The preparation process is simple to operate and low in cost, and a prepared film electrode has the characteristics of environmental friendliness, good flexibility, high tap density, excellent electrochemical performance and the like, and can be widely applied to the fields of aqueous batteries, supercapacitors or flexible energy storage device and the like.

Description

technical field [0001] The invention relates to a preparation method and application of a flexible electrode, in particular to a preparation method and application of a high-density HATN@MXene flexible self-supporting thin film electrode. Background technique [0002] With the continuous development of smart technology, wearable electronic devices have gradually appeared in various fields and will become the mainstream trend of future smart product development. However, one of the biggest challenges in the development of wearable devices is the flexible energy storage devices that are compatible with them. Electrode materials are the key factors determining the performance of flexible energy storage devices. Among them, self-supporting thin-film electrode materials, as an important part of flexible energy storage devices, have received extensive attention from scientific researchers and become the focus of research. At present, the preparation methods of self-supporting th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/02H01M4/04H01G11/22H01G11/86
CPCH01M4/02H01M4/04H01G11/22H01G11/86Y02E60/10Y02E60/13
Inventor 施敏杰徐静朱航天何静晏超
Owner JIANGSU UNIV OF SCI & TECH
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