High electron mobility transistor and high voltage semiconductor device

Abstract

The invention discloses a high electron mobility transistor which includes a substrate, a III-V channel layer, a III-V barrier layer, a III-V cover layer, a source electrode, a first drain electrode, a second drain electrode and a connecting part, wherein the III-V channel layer, the III-V barrier layer and the III-V cover layer are sequentially arranged on the substrate; the source electrode is disposed on one side of the III-V cover layer, and the first drain electrode and the second drain electrode are disposed on the other side of the III-V cover layer; the bottom surface of the first drain electrode is separated from the bottom surface of the second drain electrode, and the composition of the first drain electrode is different from the composition of the second drain electrode; and the connecting part is electrically connected to the first drain electrode and the second drain electrode.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a high-electron mobility transistor and a high-voltage semiconductor device. Background technique [0002] In semiconductor technology, III-V semiconductor compounds can be used to form various integrated circuit devices, such as high power field effect transistors, high frequency transistors or high electron mobility transistors (high electron mobility transistors, HEMTs). HEMT is a transistor with two-dimensional electron gas (two dimensional electron gas, 2-DEG), and its 2-DEG will be adjacent to the junction between two materials with different energy gaps (that is, the heterogeneous junction ). Since HEMT does not use doped regions as the carrier channel of the transistor, but uses 2-DEG as the carrier channel of the transistor, HEMT has several attractive features compared to the known metal oxide half field effect transistor (MOSFET). properties such as high electron...

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Problems solved by technology

However, during the process of forming an ohmic contact, the metal in the drain electrode usually reacts with the underlying semiconductor layer to form spiking defects, so that the local electric field adjacent to the spiking defects will be large, causing unnecessary Leakage current phenomenon, thereby increasing the cut-off current (I OFF ), reduce breakdown voltage and reliability

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