Interface characteristic measurement method based on electronic Goos-Hanchen shift

A technology of interface characteristics and measurement methods, applied in the direction of measuring devices, semiconductor/solid-state device testing/measurement, circuits, etc., to achieve the effect of easy operation and simple thinking

Active Publication Date: 2022-01-04
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no method for measuring interface properties such as surface roughness using Goos-Hanchen displacement in the prior art

Method used

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  • Interface characteristic measurement method based on electronic Goos-Hanchen shift
  • Interface characteristic measurement method based on electronic Goos-Hanchen shift
  • Interface characteristic measurement method based on electronic Goos-Hanchen shift

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] Embodiment 1: Measuring interface roughness

[0077] When the applicant studied the movement trajectory of the electron beam in the two-dimensional conductive layer, it was found that if a rough interface barrier is formed on the two-dimensional conductive layer, the electron beam is reflected on the rough interface, and the resulting Goos-Hanchen shift will be reduced. , and the Goos-Hanchen shifts of the electron beam after reflection on different rough interfaces are also different. Electron dynamics can be studied by analogy to the optical Gouss-Hanchen shift. Due to the volatility of electrons, when the incident electron beam is emitted to an interface with different potential energy or effective mass, total reflection occurs, and the phase shift of different plane waves is different, and displacement will occur along the interface. The principle of this displacement is similar to that of optical Gus-Hanchen Displacement, that is, the Goos-Hanchen shift of the inc...

Embodiment 2

[0089] Example 2: Measuring the height of the interface barrier

[0090] In this embodiment, experiments are conducted to explore the relationship between the interface barrier height and the electron Goos-Hanchen shift. This example uses figure 2 The measurement setup shown, but where the barrier shape and interface of the two-dimensional conductive layer 2 are the same as image 3 shown differently.

[0091] In the experiment, such as figure 2 As shown, the two-dimensional conductive layer 2 is a two-dimensional electron gas layer formed by the heterojunction interface of the stacked GaAs layer and AlGaAs layer. As shown in Figure 9(a), the two-dimensional conductive layer 2 is a square with a width of 150nm and a length of 150nm; a two-dimensional rectangular potential barrier with a smooth interface on the left side is formed in the two-dimensional electronic layer, and the potential barrier The potential energies are respectively 0.02eV, 0.025eV, 0.03eV, 0.035eV and...

Embodiment 3

[0095] Example 3: Distinguishing the interfaces on both sides of the gradient barrier

[0096] In this embodiment, the relationship between the interface of the linear gradient barrier and the electron Goos-Hanchen shift is explored through experiments. This example uses figure 2 The measurement setup shown, but where the barrier shape and interface of the two-dimensional conductive layer 2 are the same as image 3 shown differently.

[0097] In the experiment, such as figure 2 As shown, the two-dimensional conductive layer 2 is a two-dimensional electron gas layer formed by the heterojunction interface of the stacked GaAs layer and AlGaAs layer. For example, as shown in Figure 10(a) and Figure 10(b), the two-dimensional conductive layer 2 is a square with a width of 150nm and a length of 150nm; the left side of the two-dimensional electronic layer forms a linear gradient with a smooth interface Potential barrier, the width of the potential barrier is 20nm. The X-Y coor...

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Abstract

The invention relates to an interface characteristic measurement method based on electronic Goos-Hanchen shift. The method comprises the following steps: S1, selecting calibration samples with different interface characteristics; S2, enabling an electron wave packet to enter the plurality of calibration samples, reflecting the electron wave packet on an interface of the calibration samples, and generating a Goos-Hanchen shift phenomenon; S3, measuring different output positions and / or electronic Goos-Hanchen shifts after interface reflection in the step S2; S4, establishing a corresponding relationship between the interface characteristics and the output position and / or the electronic Goos-Hanchen shift; S5, enabling the electron wave packet to enter the device to be measured in the same initial state, and measuring an output position and / or electron Goos-Hanchen shift after the electron wave packet is reflected at the interface of the device to be measured; and S6, substituting the output position and / or the electronic Goos-Haenchen shift measured in the step S5 into the corresponding relation established in the step S4, and determining the interface characteristics of the device to be tested. According to the invention, the internal interface of the solid can be measured, the nano-scale interface can be measured, the method is used for inspecting nano devices produced in batches, the thought is simple, and the operation is easy.

Description

technical field [0001] The invention relates to the field of detection of interface characteristics of nanometer devices, in particular to an interface characteristic measurement method based on electron Goos-Hanchen shift. Background technique [0002] For the concept of surface roughness, the definition in the international GB / 3505-83 is as follows: it refers to the micro-geometric shape characteristics composed of small spacing and peaks and valleys on the processed surface. Regarding the detection of surface roughness, the existing published patents have proposed: for example, a method for detecting the surface roughness of a wafer. To realize the real-time detection of the roughness of the wafer surface. Another example is a metal surface roughness detection method based on reflection-type terahertz time-domain spectroscopy. Terahertz waves are emitted on the metal surface, and the size of the reflected terahertz waves detected by the terahertz detector located in the ...

Claims

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Application Information

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IPC IPC(8): G01B11/30G01B11/06G01B11/24H01L21/66
CPCG01B11/303G01B11/0608G01B11/24H01L22/12H01L22/20
Inventor 钟菊莲许坤远程受广
Owner SOUTH CHINA NORMAL UNIVERSITY
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